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MA47872

Description
RF Switch ICs
CategoryTopical application    Wireless rf/communication   
File Size593KB,5 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Environmental Compliance
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RF Switch ICs

MA47872 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerMACOM
Product CategoryRF Switch ICs
RoHSDetails
MA4AGBL912
AlGaAs Beamlead PIN Diode
Rev. V5
Features
Low Series Resistance
Low Capacitance
5 Nanosecond Switching Speed
Can be Driven by a Buffered +5V TTL
Silicon Nitride Passivation
Polyimide Scratch Protection
RoHS Compliant
Topside
Description
M/A-COM Technology Solutions MA4AGBLP912 is
an Aluminum-Gallium-Arsenide anode enhanced,
beam lead PIN diode. AlGaAs anodes, which utilize
M/A-COM Tech’s patented hetero-junction
technology, produce less diode “On” resistance than
conventional GaAs or silicon devices. This device is
fabricated in a OMCVD system using a process
optimized for high device uniformity and extremely
low parasitics. The result is a diode with low series
resistance, 4Ω, low capacitance, 28fF, and an
extremely fast switching speed of 5nS. It is fully
passivated with silicon nitride and has an additional
polymer coating for scratch protection. The
protective coating prevents damage to the junction
and the anode air bridges during handling and as-
sembly.
Bottom
Absolute Maximum Ratings @ T
AMB
= 25°C
(unless otherwise specified)
Parameter
Reverse Voltage
Operating Temperature
Storage Temperature
Junction Temperature
Absolute Maximum
-50V
-65°C to +125°C
-65°C to +150°C
+175°C
Applications
The ultra low capacitance of the MA4AGBLP912
device makes it ideally suited for use up to 40GHz
when used in a shunt configuration. The low RC
product and low profile of the beamlead PIN diode
allows for use in microwave switch designs, where
low insertion loss and high isolation are required.
The operating bias conditions of +10mA for the low
loss state, and 0V, for the isolation state permits the
use of a simple +5V TTL gate driver. AlGaAs,
beamlead diodes, can be used in switching arrays
on radar systems, high speed ECM circuits, optical
switching networks, instrumentation, and other
wideband multi-throw switch assemblies
.
Forward DC Current
C.W. Incident Power
Mounting Temperature
40mA
+23dBm
+235°C for 10 seconds
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support

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