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BCR 48PN E6327

Description
Bipolar Transistors - Pre-Biased NPN/PNP Silicn Digtl TRANSISTOR ARRAY
Categorysemiconductor    Discrete semiconductor   
File Size531KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BCR 48PN E6327 Overview

Bipolar Transistors - Pre-Biased NPN/PNP Silicn Digtl TRANSISTOR ARRAY

BCR 48PN E6327 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryBipolar Transistors - Pre-Biased
RoHSDetails
ConfigurationDual
Transistor PolarityNPN, PNP
Typical Input Resistor2.2 kOhms
Typical Resistor Ratio0.047, 1
Mounting StyleSMD/SMT
Package / CaseSOT-363-6
DC Collector/Base Gain hfe Min70
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mA
Peak DC Collector Current100 mA
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
Height0.9 mm
Length2 mm
Width1.25 mm
Number of Channels2 Channel
Factory Pack Quantity3000
Unit Weight0.000265 oz
BCR48PN
NPN/PNP Silicon Digital Transistor Array
Switching circuit, inverter, interface circuit,
driver circuit
Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Built in bias resistor
NPN:
R
1
= 47kΩ,
R
2
= 47kΩ
PNP:
R
1
= 2.2kΩ,
R
2
= 47kΩ
Pb-free (RoHS compliant) package
Qualified according AEC Q101
C1
6
B2
5
E2
4
4
5
6
1
2
3
R
2
Top View
654
W1s
123
Direction of Unreeling
Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
R
1
TR1
R
2
1
E1
2
B1
R
1
TR2
3
C2
EHA07176
Position in tape: pin 1
opposite of feed hole side
EHA07193
Type
BCR48PN
Maximum Ratings
Parameter
Marking
WTs
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Symbol
V
CEO
V
CBO
NPN
PNP
NPN
PNP
NPN
PNP
V
i(fwd)
V
i(fwd)
V
i(rev)
V
i(rev)
I
C
I
C
P
tot
T
j
T
stg
Value
50
50
80
20
10
5
70
100
250
150
-65...+150
Unit
V
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input forward voltage
Input reverse voltage
Input reverse voltage
DC collector current
DC collector current
Junction temperature
Storage temperature
mA
mW
°C
Total power dissipation,
T
S
= 115 °C
1
2011-07-28

BCR 48PN E6327 Related Products

BCR 48PN E6327 BCR 48PN H6433 BCR 48PN E6433
Description Bipolar Transistors - Pre-Biased NPN/PNP Silicn Digtl TRANSISTOR ARRAY Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTORS Bipolar Transistors - Pre-Biased Discrete Semiconductor Products Transistors (BJT) - Arrays, Pre-Biased - TRANSISTOR ARRAY NPN/PNP SOT-363
Product Attribute Attribute Value Attribute Value Attribute Value
Manufacturer Infineon Infineon Infineon
Product Category Bipolar Transistors - Pre-Biased Bipolar Transistors - Pre-Biased Bipolar Transistors - Pre-Biased
Configuration Dual - Dual
Transistor Polarity NPN, PNP - NPN, PNP
Typical Input Resistor 2.2 kOhms - 2.2 kOhms
Typical Resistor Ratio 0.047, 1 - 0.047, 1
Mounting Style SMD/SMT - SMD/SMT
Package / Case SOT-363-6 - SOT-363-6
DC Collector/Base Gain hfe Min 70 - 70
Collector- Emitter Voltage VCEO Max 50 V - 50 V
Continuous Collector Current 100 mA - 100 mA
Peak DC Collector Current 100 mA - 100 mA
Maximum Operating Temperature + 150 C - + 150 C
Height 0.9 mm - 0.9 mm
Length 2 mm - 2 mm
Width 1.25 mm - 1.25 mm
Number of Channels 2 Channel - 2 Channel
Unit Weight 0.000265 oz - 0.000265 oz
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