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7164S25TDB

Description
SRAM 64K(8KX8) BICMOS STAT RAM
Categorystorage    storage   
File Size632KB,11 Pages
ManufacturerIDT (Integrated Device Technology)
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7164S25TDB Overview

SRAM 64K(8KX8) BICMOS STAT RAM

7164S25TDB Parametric

Parameter NameAttribute value
Brand NameIntegrated Device Technology
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Parts packaging codeCDIP
package instructionDIP, DIP28,.3
Contacts28
Manufacturer packaging codeSD28
Reach Compliance Codenot_compliant
ECCN code3A001.A.2.C
Samacsys DescriptionCERDIP 300 MIL
Maximum access time25 ns
I/O typeCOMMON
JESD-30 codeR-CDIP-T28
JESD-609 codee0
memory density65536 bit
Memory IC TypeSTANDARD SRAM
memory width8
Humidity sensitivity level1
Number of functions1
Number of terminals28
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize8KX8
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
power supply5 V
Certification statusNot Qualified
Filter levelMIL-STD-883 Class B
Maximum standby current0.02 A
Minimum standby current4.5 V
Maximum slew rate0.18 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
CMOS Static RAM
64K (8K x 8-Bit)
Features
Description
IDT7164S
IDT7164L
High-speed address/chip select access time
– Military: 20/25/35/45/55/70/85/100ns (max.)
– Industrial: 20/25ns (max.)
– Commercial: 20/25ns (max.)
Low power consumption
Battery backup operation – 2V data retention voltage
(L Version only)
Produced with advanced CMOS high-performance
technology
Inputs and outputs directly TTL-compatible
Three-state outputs
Available in 28-pin DIP, CERDIP and SOJ
Military product compliant to MIL-STD-883, Class B
Green parts available, see ordering information
The IDT7164 is a 65,536 bit high-speed static RAM organized as 8K
x 8. It is fabricated using high-performance, high-reliability CMOS tech-
nology.
Address access times as fast as 20ns are available and the circuit offers
a reduced power standby mode. When
CS
1
goes HIGH or CS
2
goes
LOW, the circuit will automatically go to, and remain in, a low-power stand-
by mode. The low-power (L) version also offers a battery backup data
retention capability at power supply levels as low as 2V.
All inputs and outputs of the IDT7164 are TTL-compatible and
operation is from a single 5V supply, simplifying system designs. Fully
static asynchronous circuitry is used, requiring no clocks or refreshing
for operation.
The IDT7164 is packaged in a 28-pin 300 mil CERDIP, a 28-pin 600
mil CERDIP, 300mil Plastic DIP and 300mil SOJ
Military grade product is manufactured in compliance with MIL-STD-
883, Class B, making it ideally suited to military temperature applications
demanding the highest level of performance and reliability.
Functional Block Diagram
A
0
V
CC
ADDRESS
DECODER
65,536 BIT
MEMORY ARRAY
GND
A
12
0
7
I/O
0
I/O CONTROL
I/O
7
CS
1
CS
2
OE
WE
CONTROL
LOGIC
2967 drw 01
DECEMBER 2016
1
©2016 Integrated Device Technology, Inc.
DSC-2967/17
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