72SD3232RPMH datasheet, PDF - EEWORLD Datasheet

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72SD3232RPMH: DescriptionSynchronous DRAM, 32MX32, 6ns, CMOS; Categorystorage; File Size590KB，41 Pages; ManufacturerMaxwell Technologies Inc.

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72SD3232RPMH Overview

Synchronous DRAM, 32MX32, 6ns, CMOS

72SD3232RPMH Parametric

Parameter Name	Attribute value
Maker	Maxwell Technologies Inc.
package instruction	DFP,
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
access mode	FOUR BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-XDFP-F72
length	26.67 mm
memory density	1073741824 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	32
Number of functions	1
Number of ports	1
Number of terminals	72
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	32MX32
Package body material	UNSPECIFIED
encapsulated code	DFP
Package shape	RECTANGULAR
Package form	FLATPACK
Certification status	Not Qualified
self refresh	YES
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	FLAT
Terminal pitch	0.635 mm
Terminal location	DUAL
width	19 mm
Base Number Matches	1

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72SD3232

1 Gbit SDRAM

32-Meg X 32-Bit X 4-Banks

Logic Diagram

(One Amplifier)

Memory

EATURES

• 1 Gigabit ( 32-Meg X 32-Bit X 4-Banks)

• RAD-PAK® radiation-hardened against natural space

radiation

• Total Dose Hardness:

>100 krad (Si), depending upon space mission

• Excellent Single Event Effects:

SEL

> 85 MeV/mg/cm

@ 25

ESCRIPTION

Maxwell Technologies’ Synchronous Dynamic Random

Access Memory (SDRAM) is ideally suited for space

applications requiring high performance computing and

high density memory storage. As microprocessors

increase in speed and demand for higher density mem-

ory escalates, SDRAM has proven to be the ultimate

solution by providing bit-counts up to 1 Gigabits and

speeds up to 100 Megahertz. SDRAMs represent a sig-

nificant advantage in memory technology over traditional

SRAMs including the ability to burst data synchronously

at high rates with automatic column-address generation,

the ability to interleave between banks masking pre-

charge time, and the ability to randomly change column

address during each clock cycle.

Maxwell Technologies’ patented R

-P

packaging

technology incorporates radiation shielding in the micro-

circuit package. It eliminates the need for box shielding

for a lifetime in orbit or space mission. In a typical GEO

orbit, R

-P

provides greater than 100 krads(Si)

radiation dose tolerance. This product is available with

screening up to Maxwell Technologies self-defined Class

01.11.05 Rev 2

•

JEDEC Standard 3.3V Power Supply

Clock Frequency: 100 MHz Operation

Operating tremperature: -55 to +125

Auto Refresh

Single pulsed RAS

2 Burst Sequence variations

Sequential (BL =1/2/4/8)

Interleave (BL = 1/2/4/8)

Programmable CAS latency: 2/3

Power Down and Clock Suspend Modes

LVTTL Compatible Inputs and Outputs

Package: 72-Pin R

-Stack Package

All data sheets are subject to change without notice

(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com

72SD3232RPMH Related Products

	72SD3232RPMH	72SD3232RPMI	72SD3232RPMK	72SD3232RPME
Description	Synchronous DRAM, 32MX32, 6ns, CMOS	Synchronous DRAM, 32MX32, 6ns, CMOS	Synchronous DRAM, 32MX32, 6ns, CMOS	Synchronous DRAM, 32MX32, 6ns, CMOS
Maker	Maxwell Technologies Inc.	Maxwell Technologies Inc.	Maxwell Technologies Inc.	Maxwell Technologies Inc.
package instruction	DFP,	DFP,	DFP,	DFP,
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	6 ns	6 ns	6 ns	6 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	R-XDFP-F72	R-XDFP-F72	R-XDFP-F72	R-XDFP-F72
length	26.67 mm	26.67 mm	26.67 mm	26.67 mm
memory density	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	32	32	32	32
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	72	72	72	72
word count	33554432 words	33554432 words	33554432 words	33554432 words
character code	32000000	32000000	32000000	32000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
organize	32MX32	32MX32	32MX32	32MX32
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DFP	DFP	DFP	DFP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK	FLATPACK	FLATPACK	FLATPACK
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
self refresh	YES	YES	YES	YES
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY
Terminal form	FLAT	FLAT	FLAT	FLAT
Terminal pitch	0.635 mm	0.635 mm	0.635 mm	0.635 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
width	19 mm	19 mm	19 mm	19 mm
Base Number Matches	1	1	1	1

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