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BZV55B3V3

Description
Zener Diodes 3.3 Volt 500mW 2%
CategoryDiscrete semiconductor    diode   
File Size489KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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Zener Diodes 3.3 Volt 500mW 2%

BZV55B3V3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionO-LELF-R2
Reach Compliance Codecompliant
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeO-LELF-R2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Nominal reference voltage3.3 V
surface mountYES
technologyZENER
Terminal surfaceMatte Tin (Sn)
Terminal formWRAP AROUND
Terminal locationEND
Maximum voltage tolerance2.12%
Working test current5 mA
BZV55B2V4 ~ BZV55B75
Taiwan Semiconductor
Small Signal Product
500mW, 2% Tolerance Zener Diode
FEATURES
- Wide zener voltage range selection : 2.4V to 75V
- VZ Tolerance Selection of ±2%
- Hermetically sealed glasss
- Pb free and RoHS compliant
- High reliability glass passivation insuring parameter
stability and protection against junction contamination
Mini-MELF (LL34)
Hermetically Sealed Glass
MECHANICAL DATA
- Case: Mini-MELF Package (JEDEC DO-213AC)
- High temperature soldering guaranteed: 270
o
C/10s
- Polarity: Indicated by cathode band
- Weight : 31 mg (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Forward Voltage
Thermal Resistance (Junction to Ambient)
Storage Temperature Range
Note1 : Valid provided that electrodes are kept at ambient temperature
I
F
= 100 mA
(Note 1)
SYMBOL
P
D
V
F
R
θJA
T
J
, T
STG
VALUE
500
1
300
- 65 to + 175
UNIT
mW
V
o
C/W
o
C
Zener I vs. V Characteristics
V
BR
I
ZK
Z
ZK
I
ZT
V
Z
Z
ZT
I
ZM
V
ZM
: Voltage at I
ZK
: Test current for voltage V
BR
: Dynamic impedance at I
ZK
: Test current for voltage V
Z
: Voltage at current I
: Dynamic impedance at I
ZT
: Maximum steady state current
: Voltage at I
ZM
Document Number: DS_S1403001
Version: E14
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