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FEP16ATA

Description
Rectifiers 16a Rectifier Ultra Fast Recovery
CategoryDiscrete semiconductor    diode   
File Size68KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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FEP16ATA Overview

Rectifiers 16a Rectifier Ultra Fast Recovery

FEP16ATA Parametric

Parameter NameAttribute value
MakerON Semiconductor
Reach Compliance Codecompliant
Is SamacsysN
Base Number Matches1
FEP16AT - FEP16JT
PIN 1
+
CASE
PIN 2
FEP16AT - FEP16JT
Features
Low forward voltage drop.
High surge current capacity.
High current capability.
High reliability.
1
2
3
PIN 3
Positive CT
PIN 1
PIN 3
Negative CT
Suffix "A"
PIN 1
-
CASE
PIN 2
AC
CASE
PIN 2
TO-220AB
PIN 3
Doubler
Suffix "D"
• Average Forward Current Rating at 16A (8A per Diode).
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
16AT
16BT
16CT
Value
16DT
16FT
16GT
16HT
16JT
Units
400
500
600
V
A
A
°C
°C
T
stg
T
J
Maximum Repetitive Reverse
Voltage
Average Rectified Forward Current,
.375 " lead length @ T
A
= 100°C
Non-repetitive Peak Forward Surge
Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
50
100
150
200
300
16
200
-55 to +150
-55 to +150
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
R
θJL
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Value
8.33
15
2.2
Units
W
°C/W
°C/W
Electrical Characteristics
Symbol
V
F
t
rr
I
R
T
A
= 25°C unless otherwise noted
Parameter
16AT
16BT
Device
16CT 16DT
16FT
16GT
16HT
16JT
Units
1.5
50
V
ns
µA
µA
60
pF
C
T
Forward Voltage @ 8.0A
Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
RR
= 0.25 A
Reverse Current @ rated V
R
T
A
= 25°C
T
A
= 100°C
Total Capacitance
V
R
= 4.0. f = 1.0 MHz
0.95
35
10
500
85
1.3
2001
Fairchild Semiconductor Corporation
FEP16AT - FEP16JT, Rev. C

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