FEP16AT - FEP16JT
PIN 1
+
CASE
PIN 2
FEP16AT - FEP16JT
Features
•
Low forward voltage drop.
•
High surge current capacity.
•
High current capability.
•
High reliability.
1
2
3
PIN 3
Positive CT
PIN 1
PIN 3
Negative CT
Suffix "A"
PIN 1
-
CASE
PIN 2
AC
CASE
PIN 2
TO-220AB
PIN 3
Doubler
Suffix "D"
• Average Forward Current Rating at 16A (8A per Diode).
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
16AT
16BT
16CT
Value
16DT
16FT
16GT
16HT
16JT
Units
400
500
600
V
A
A
°C
°C
T
stg
T
J
Maximum Repetitive Reverse
Voltage
Average Rectified Forward Current,
.375 " lead length @ T
A
= 100°C
Non-repetitive Peak Forward Surge
Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
50
100
150
200
300
16
200
-55 to +150
-55 to +150
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
R
θJL
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Value
8.33
15
2.2
Units
W
°C/W
°C/W
Electrical Characteristics
Symbol
V
F
t
rr
I
R
T
A
= 25°C unless otherwise noted
Parameter
16AT
16BT
Device
16CT 16DT
16FT
16GT
16HT
16JT
Units
1.5
50
V
ns
µA
µA
60
pF
C
T
Forward Voltage @ 8.0A
Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
RR
= 0.25 A
Reverse Current @ rated V
R
T
A
= 25°C
T
A
= 100°C
Total Capacitance
V
R
= 4.0. f = 1.0 MHz
0.95
35
10
500
85
1.3
2001
Fairchild Semiconductor Corporation
FEP16AT - FEP16JT, Rev. C
FEP16AT - FEP16JT
Typical Characteristics
Average Rectified Forward Current, I
F
[A]
Peak Forward Surge Current, I
FSM
[A]
20
200
16
160
12
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.0mm) LEAD
LENGTHS
120
8
80
4
40
0
0
25
50
75
100
125
Ambient Temperature [ºC]
150
175
0
1
2
5
10
20
Number of Cycles at 60Hz
50
100
Figure 1. Forward Current Derating Curve
100
FEP16AT-FEP16DT
Figure 2. Non-Repetitive Surge Current
Reverse Characteristics
1000
Forward Current, I
F
[A]
Reverse Current, I
R
[mA]
10
FEP16FT-FEP16JT
100
T
A
= 100
º
C
1
10
0.1
T
A
= 25
º
C
Pulse Width = 300µs
µ
2% Duty Cycle
1
T
A
= 25
º
C
0.01
0.4
0.1
0.6
0.8
1
1.2
1.4
Forward Voltage, V
F
[V]
1.6
1.8
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage [%]
Figure 3. Forward Voltage Characteristics
100
Total Capacitance, C
T
[pF]
90
80
70
60
50
FEP16FT-FEP16JT
40
Figure 4. Reverse Current vs Reverse Voltage
FEP16AT-FEP16DT
1
2
5
10
20
Reverse Voltage, V
R
[V]
50
100
Figure 5. Total Capacitance
50Ω
NONINDUCTIVE
50Ω
NONINDUCTIVE
+0.5A
(-)
trr
DUT
50V
(approx)
50Ω
NONINDUCTIVE
Pulse
Generator
(Note 2)
(+)
OSCILLOSCOPE
(Note 1)
0
-0.25A
-1.0A
1.0cm
SET TIME BASE FOR
5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
2001
Fairchild Semiconductor Corporation
FEP16AT - FEP16JT, Rev. C
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not intended to be an exhaustive list of all such trademarks.
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E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
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®
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®
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®
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®
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failure to perform when properly used in accordance
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with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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First Production
No Identification Needed
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Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4