PHP143NQ04T
N-channel TrenchMOS standard level FET
Rev. 03 — 26 April 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC convertors
General industrial applications
Motors, lamps and solenoids
Uninterruptible power supplies
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max Unit
40
75
200
V
A
W
Static characteristics
R
DSon
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 9;
see
Figure 10
-
4.4
5.2
mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
= 10 V; I
D
= 25 A; V
DS
= 32 V;
T
j
= 25 °C; see
Figure 11
-
16
-
nC
NXP Semiconductors
PHP143NQ04T
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to
drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
PHP143NQ04T
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Type number
PHP143NQ04T
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 26 April 2010
2 of 14
NXP Semiconductors
PHP143NQ04T
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
V
GS
= 10 V; T
mb
= 100 °C;
see
Figure 1
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
= 25 °C
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
V
GS
= 10 V; T
j(init)
= 25 °C;
I
D
= 69 A; V
sup
≤
40 V; unclamped;
t
p
= 0.27 ms; R
GS
= 50
Ω
t
p
≤
10 µs; pulsed; T
mb
= 25 °C;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
j
≥
25 °C; T
j
≤
175 °C;
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
Max
40
40
20
75
75
240
200
175
175
75
240
475
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Avalanche ruggedness
120
I
der
(%)
80
03aq60
120
P
der
(%)
80
03aa16
40
40
0
0
0
50
100
150
200
T
mb
(°C)
0
50
100
150
T
mb
(°C)
200
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
PHP143NQ04T
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 26 April 2010
3 of 14
NXP Semiconductors
PHP143NQ04T
N-channel TrenchMOS standard level FET
10
3
I
D
(A)
10
2
Limit R
DSon
= V
DS
/ I
D
t
p
= 10
μs
100
μs
03aq53
DC
10
1 ms
10 ms
100 ms
1
1
10
V
DS
(V)
10
2
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PHP143NQ04T
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 26 April 2010
4 of 14
NXP Semiconductors
PHP143NQ04T
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see
Figure 4
vertical in still air
Min
-
-
Typ
-
60
Max
0.75
-
Unit
K/W
K/W
1
03aq52
Z
th(j-mb)
(K/W)
δ
= 0.5
0.2
10
−1
0.1
0.05
0.02
single pulse
P
δ
=
t
p
T
t
p
t
T
10
−2
10
−4
10
−3
10
−2
10
−1
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PHP143NQ04T
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 26 April 2010
5 of 14
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