DMG4435SSS
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
-30V
R
DS(on) max
16m @ V
GS
= -20V
20m @ V
GS
= -10V
I
D
T
A
= +25°C
-7.3A
-6.0A
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
NEW PRODUCT
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.074 grams (approximate)
Applications
DC-DC Converters
Power management functions
Backlighting
SO-8
S
S
S
G
D
D
D
D
Top View
Internal Schematic
D
G
S
Equivalent circuit
Top View
Ordering Information
(Note 4)
Part Number
DMG4435SSS-13
Notes:
Case
SO-8
Packaging
2500 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
G4435SS
YY WW
1
4
1
G4435SS
YY WW
4
= Manufacturer’s Marking
G4435SS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Chengdu A/T Site
Shanghai A/T Site
DMG4435SSS
Document number: DS32041 Rev. 5 - 2
1 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG4435SSS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady State
Continuous Drain Current (Note 5) V
GS
= -20
t < 10s
Pulsed Drain Current (Note 6)
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
DM
Value
-30
±25
-7.3
-5.7
-10
-7.5
-80
Unit
V
V
A
A
A
NEW PRODUCT
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T
A
= +25°C
Operating and Storage Temperature Range
T
A
= +25°C
T
A
= +70°C
Steady state
t < 10s
Symbol
P
D
R
θJA
T
J
,
T
STG
Value
2.5
1.5
96.5
55
-55 to +150
Unit
W
W
°C/W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
-30
—
—
-1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
-1.7
13
15
21
22
-0.74
1614
226
214
6.8
35.4
18.9
4.6
5.7
8.6
12.7
44.9
22.8
Max
—
-1.0
±100
-2.5
16
20
29
—
-1.0
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
nA
V
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= -1mA
V
DS
= -30V, V
GS
= 0V
V
GS
= ±25V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -20V, I
D
= -11A
V
GS
= -10V, I
D
= -10A
V
GS
= -5V, I
D
= -5A
V
DS
= -5V, I
D
= -10A
V
GS
= 0V, I
S
= -1A
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
GS
= -10V, V
DS
= -15V, I
D
= -10A
V
GS
= -5V, V
DS
= -15V,
I
D
= -10A
V
DS
= -15V, V
GS
= -10V,
R
L
= 1.5Ω, R
GEN
= 3Ω,
5. Device mounted on 1in. x 1in. FR-4 PCB with 2oz. Copper, and
the testing is based on the
t<10s.
The value in any given application depends on the
user’s specific board design.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG4435SSS
Document number: DS32041 Rev. 5 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG4435SSS
30
V
GS
= -10V
30
25
V
GS
= -4.5V
V
GS
= -4.0V
V
DS
= -5V
25
-I
D
, DRAIN CURRENT (A)
-I
D
, DRAIN CURRENT (A)
20
20
15
10
V
GS
= -3.5V
V
GS
= -3.0V
15
NEW PRODUCT
10
T
A
= 150°C
T
A
= 125°C
5
0
V
GS
= -2.2V
V
GS
= -2.5V
5
0
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0
0.5
1
1.5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
2
0
0.5
1
1.5
2
2.5
3
3.5
-V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.05
0.06
0.05
V
GS
= -4.5V
0.04
0.04
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
0.03
0.03
0.02
V
GS
= -4.5V
0.02
T
A
= 25°C
T
A
= -55°C
V
GS
= -10V
0.01
0.01
0
0
0
5
10
15
20
25
-I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
30
0
10
15
20
25
-I
D
, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
5
30
1.6
R
DSON
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.04
R
DSON
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.4
V
GS
= -4.5V
I
D
= -10A
0.03
V
GS
= -4.5V
I
D
= -10A
1.2
V
GS
= -10V
I
D
= -20A
0.02
1.0
0.01
0.8
V
GS
= -10V
I
D
= -20A
0.6
-50
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMG4435SSS
Document number: DS32041 Rev. 5 - 2
3 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG4435SSS
3.0
-V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
2.5
30
25
-I
S
, SOURCE CURRENT (A)
2.0
I
D
= -1mA
20
1.5
I
D
= -250µA
15
T
A
= 25°C
NEW PRODUCT
1.0
10
0.5
0
-50 -25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
5
0
0
0.2
0.4
0.6
0.8
1.0
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
10,000
f = 1MHz
10,000
T
A
= 150°C
-I
DSS
, LEAKAGE CURRENT (µA)
1,000
T
A
= 125°C
1,000
C
iss
100
T
A
= 85°C
C
oss
C
rss
10
100
1
T
A
= 25°C
10
0
5
10
15
20
25
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
30
0.1
0
10
20
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
30
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
10
V
GS(TH)
, GATE-THRESHOLD VOLTAGE (V)
9
8
7
6
5
4
3
2
1
0
10
15
20
25
30
35 40
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 11 Gate Threshold Voltage vs. Total Gate Charge
0
5
DMG4435SSS
Document number: DS32041 Rev. 5 - 2
4 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG4435SSS
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
JA
(t) = r(t) * R
JA
R
JA
= 98°C/W
P(pk)
D = 0.02
NEW PRODUCT
0.01
D = 0.01
D = 0.005
t
1
D = Single Pulse
t
2
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/t
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
10
100
1,000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SO-8
Dim
Min
Max
A
-
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
-
0.35
L
0.62
0.82
0
8
All Dimensions in mm
E1 E
A1
L
0.254
Gauge Plane
Seating Plane
Detail ‘A’
h
A2 A A3
e
D
b
7
°~
9
°
45
°
Detail ‘A’
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
C1
C2
Y
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
DMG4435SSS
Document number: DS32041 Rev. 5 - 2
5 of 6
www.diodes.com
September 2013
© Diodes Incorporated
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