BD246, BD246A, BD246B, BD246C
PNP SILICON POWER TRANSISTORS
●
●
●
●
●
Designed for Complementary Use with the
BD245 Series
80 W at 25°C Case Temperature
10 A Continuous Collector Current
15 A Peak Collector Current
Customer-Specified Selections Available
C
B
SOT-93 PACKAGE
(TOP VIEW)
1
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD246
Collector-emitter voltage (R
BE
= 100
Ω)
BD246A
BD246B
BD246C
BD246
Collector-emitter voltage (I
C
= -30 mA)
BD246A
BD246B
BD246C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
½LI
C
2
T
j
T
stg
T
L
V
CEO
V
CER
SYMBOL
VALUE
-55
-70
-90
-115
-45
-60
-80
-100
-5
-10
-15
-3
80
3
62.5
-65 to +150
-65 to +150
250
V
A
A
A
W
W
mJ
°C
°C
°C
V
V
UNIT
This value applies for t
p
≤
0.3 ms, duty cycle
≤
10%.
Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -0.4 A, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= -20 V.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
BD246, BD246A, BD246B, BD246C
PNP SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BD246
V
(BR)CEO
I
C
= -30 mA
(see Note 5)
V
CE
= -55 V
I
CES
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
V
CE
= -70 V
V
CE
= -90 V
V
CE
= -115 V
I
CEO
I
EBO
V
CE
= -30 V
V
CE
= -60 V
V
EB
=
V
CE
=
V
CE
=
V
CE
=
I
B
=
I
B
=
V
CE
=
V
CE
=
-5 V
-4 V
-4 V
-4 V
-0.3 A
-2.5 A
-4 V
-4 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
I
C
= 0
I
C
=
I
C
=
I
C
=
I
C
=
-1 A
-3 A
-3 A
-3 A
(see Notes 5 and 6)
40
20
4
(see Notes 5 and 6)
(see Notes 5 and 6)
f = 1 kHz
f = 1 MHz
20
3
-1
-4
-1.6
-3
V
V
I
B
= 0
BD246A
BD246B
BD246C
BD246
BD246A
BD246B
BD246C
BD246/246A
BD246B/246C
MIN
-45
-60
-80
-100
-0.4
-0.4
-0.4
-0.4
-0.7
-0.7
-1
mA
mA
mA
V
TYP
MAX
UNIT
h
FE
I
C
= -10 A
I
C
= -10 A
I
C
= -10 A
I
C
= -0.5 A
I
C
= -0.5 A
V
CE(sat)
V
BE
h
fe
V
CE
= -10 V
V
CE
= -10 V
|
h
fe
|
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1.56
42
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= -1 A
V
BE(off)
= 3.7 V
I
B(on)
= -0.1 A
R
L
= 20
Ω
†
MIN
I
B(off)
= 0.1 A
t
p
= 20 µs, dc
≤
2%
TYP
0.2
0.8
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BD246, BD246A, BD246B, BD246C
PNP SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
1000
V
CE
= -4 V
T
C
= 25°C
t
p
= 300 µs, duty cycle < 2%
TCS634AG
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
-10
TCS634AB
I
C
=
I
C
=
I
C
=
I
C
=
-1·0
-1 A
-3 A
-6 A
-10 A
h
FE
- DC Current Gain
100
10
-0·1
1
-0·1
-1·0
I
C
- Collector Current - A
-10
-0·01
-0·01
-0·1
-1·0
-10
I
B
- Base Current - A
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
-1·6
V
CE
= -4 V
T
C
= 25 °C
V
BE
- Base-Emitter Voltage - V
-1·4
TCS634AC
-1·2
-1·0
-0·8
-0·6
-0·1
-1·0
I
C
- Collector Current - A
-10
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BD246, BD246A, BD246B, BD246C
PNP SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
-100
SAS634AC
I
C
- Collector Current - A
-10
t
p
= 300 µs, d = 0.1 = 10%
t
p
= 1 ms, d = 0.1 = 10%
t
p
= 10 ms, d = 0.1 = 10%
DC Operation
-1·0
-0·1
BD246
BD246A
BD246B
BD246C
-10
-100
-1000
-0·01
-1·0
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
100
P
tot
- Maximum Power Dissipation - W
TIS633AA
80
60
40
20
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
Figure 5.
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
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