PolarHT
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
IXFH 110N10P
IXFV 110N10P
IXFV 110N10PS
V
DSS
= 100 V
I
D25
= 110 A
R
DS(on)
≤
15 mΩ
Ω
t
rr
≤
150 ns
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight
Test Conditions
T
J
= 25° C to 175° C
T
J
= 25° C to 175° C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25° C
External lead current limit
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
T
C
= 25° C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150° C, R
G
= 4
Ω
T
C
= 25° C
Maximum Ratings
100
100
±20
±30
110
75
250
60
40
1.0
10
480
-55 ... +175
175
-55 ... +150
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
°C
TO-247 (IXFH)
G
D
S
(TAB)
PLUS220 (IXFV)
G
D
S
D (TAB)
PLUS220SMD (IXFV...S)
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Mounting Force
TO-247
PLUS220
(TO-247)
(PLUS220)
300
260
G
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
1.13/10 Nm/lb.in.
11..65 / 2.5..15
6
4
N/lb
g
g
Symbol
Test Conditions
(T
J
= 25° C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 150° C
Characteristic Values
Min. Typ.
Max.
100
2.5
5.0
±100
25
250
15
V
V
nA
µA
µA
m
Ω
Features
l
Fast intrinsic diode
l
International standard packages
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
l
Space savings
l
High power density
l
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
© 2006 IXYS All rights reserved
DS99212E(01/06)
IXFH 110N10P IXFV110N10P
IXFV 110N10PS
Symbol
Test Conditions
Characteristic Values
(T
J
= 25° C, unless otherwise specified)
Min.
Typ.
Max.
30
40
3550
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1370
440
21
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 60 A
R
G
= 4
Ω
(External)
25
65
25
110
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
25
62
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.31° C/W
(TO-247)
0.21
°
C/W
Terminals: 1 - Gate 2 - Drain
3 - Source TAB - Drain
1
2
3
TO-247 (IXFH) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
Dim.
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
Test Conditions
V
GS
= 0 V
Repetitive
Characteristic Values
(T
J
= 25° C, unless otherwise specified)
Min.
Typ.
Max.
110
250
1.5
A
A
V
Millimeter
Min. Max.
A
4.7
5.3
A
1
2.2
2.54
A
2
2.2
2.6
b
1.0
1.4
1.65
2.13
b
1
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
PLUS220 (IXFV) Outline
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= 25 A, -di/dt = 100 A/µs
V
R
= 50 V, V
GS
= 0 V
0.6
150 ns
µC
PLUS220SMD (IXFV_S) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
IXFH 110N10P IXFV110N10P
IXFV 110N10PS
Fig. 1. Output Characteristics
@ 25
º
C
110
100
90
80
V
GS
= 10V
9V
220
200
180
160
8V
9V
V
GS
= 10V
Fig. 2. Extended Output Characteristics
@ 25
º
C
I
D
- Amperes
I
D
- Amperes
70
60
50
40
30
20
10
0
0
0.2
0.4
0.6
0.8
1
1.2
140
120
100
80
60
7V
6V
8V
7V
6V
5V
1.4
1.6
1.8
2
40
20
0
0
1
2
3
4
5
6
7
8
9
10
V
D S
- Volts
Fig. 3. Output Characteristics
@ 150
º
C
110
100
90
80
V
GS
= 10V
9V
2.4
2.2
V
GS
= 10V
V
D S
- Volts
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
R
D S ( o n )
- Normalized
2
1.8
1.6
1.4
1.2
1
0.8
0.6
I
D
= 55A
I
D
= 110A
I
D
- Amperes
70
60
50
40
30
20
10
0
0
0.5
1
1.5
8V
7V
6V
5V
V
D S
- Volts
2
2.5
3
3.5
4
-50
-25
0
25
50
75
100
125
150
175
T
J
- Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
80
70
External Lead Current Limit
Fig. 5. R
DS(on)
Norm alized to 0.5 I
D25
Value vs. Drain Current
3
2.8
2.6
R
D S ( o n )
- Normalized
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0
25
50
75
V
GS
= 15V
T
J
= 175
º
C
60
I
D
- Amperes
T
J
= 25
º
C
50
40
30
20
10
0
V
GS
= 10V
I
D
- Amperes
100 125 150 175 200 225 250
-50
-25
0
T
C
- Degrees Centigrade
25
50
75
100
125
150
175
© 2006 IXYS All rights reserved
IXFH 110N10P IXFV110N10P
IXFV 110N10PS
Fig. 7. Input Adm ittance
250
225
200
T
J
= -40
º
C
25
º
C
150
º
C
70
60
50
Fig. 8. Transconductance
g
f s
- Siemens
I
D
- Amperes
175
150
125
100
75
50
25
0
4
5
6
7
40
30
20
10
0
T
J
= -40
º
C
25
º
C
150
º
C
8
9
1
0
1
1
0
50
100
150
200
250
300
V
G S
- Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
350
300
250
10
9
8
7
V
DS
= 50V
I
D
= 55A
I
G
= 10mA
I
D
- Amperes
Fig. 10. Gate Charge
I
S
- Amperes
V
G S
- Volts
T
J
= 150
º
C
T
J
= 25
º
C
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
200
150
100
50
0
6
5
4
3
2
1
0
V
S D
- Volts
0
20
Q
G
- nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
40
60
80
100
120
Fig. 11. Capacitance
10000
1000
T
J
= 175
º
C
Capacitance - picoFarads
T
C
= 25
º
C
I
D
- Amperes
C iss
R
DS(on)
Limit
25µs
100
100µs
1ms
1000
C oss
f = 1MHz
100
0
5
10
15
C rss
10ms
DC
10
V
DS
- Volts
20
25
30
35
40
1
10
V
D S
- Volts
100
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 110N10P IXFV110N10P
IXFV 110N10PS
F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
1.00
R
( t h ) J C
- ºC / W
0.10
0.01
0.1
1
10
100
1000
Pu ls e W id th - m illis e c o n d s
© 2006 IXYS All rights reserved
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