BC846BDW1T1G,
SBC846BDW1T1G,
BC847BDW1T1G,
SBC847BDW1T1G Series,
NSVBC847BDW1T2G,
BC848CDW1T1G
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
(3)
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SOT−363
CASE 419B
STYLE 1
(2)
(1)
•
S and NSV Prefixes for Automotive and Other Applications
Q
1
Q
2
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current
−
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
BC846
65
80
6.0
100
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
(4)
(5)
(6)
MARKING DIAGRAM
6
1x MG
G
1
1x
x
M
G
= Specific Device Code
= B, F, G, L
= Date Code
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation Per Device
FR−5 Board (Note 1)
T
A
= 25°C
Derate Above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature
Range
Symbol
P
D
Max
380
250
3.0
328
−55
to +150
Unit
mW
mW/°C
mW/°C
°C/W
°C
R
qJA
T
J
, T
stg
1. FR−5 = 1.0 x 0.75 x 0.062 in
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2012
September, 2012
−
Rev. 9
1
Publication Order Number:
BC846BDW1T1/D
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series,
NSVBC847BDW1T2G, BC848CDW1T1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
= 10 mA)
BC846, SBC846 Series
BC847, SBC847 Series, NSVBC847
BC848 Series
Collector
−Emitter
Breakdown Voltage
(I
C
= 10
mA,
V
EB
= 0)
BC846, SBC846 Series
BC847, SBC847 Series, NSVBC847
BC848 Series
Collector
−Base
Breakdown Voltage
(I
C
= 10
mA)
BC846, SBC846 Series
BC847, SBC847 Series, NSVBC847
BC848 Series
Emitter
−Base
Breakdown Voltage
(I
E
= 1.0
mA)
BC846, SBC846 Series
BC847, SBC847 Series, NSVBC847
BC848 Series
Collector Cutoff Current
(V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
mA,
V
CE
= 5.0 V)
BC846B, SBC846B, BC847B, SBC847B, NSVBC847
BC847C, SBC847C, BC848C
(I
C
= 2.0 mA, V
CE
= 5.0 V)
BC846B, SBC846B, BC847B, SBC847B, NSVBC847
BC847C, SBC847C, BC848C
Collector
−Emitter
Saturation Voltage
(I
C
= 10 mA, I
B
= 0.5 mA)
(I
C
= 100 mA, I
B
= 5.0 mA)
Base
−Emitter
Saturation Voltage
(I
C
= 10 mA, I
B
= 0.5 mA)
(I
C
= 100 mA, I
B
= 5.0 mA)
Base
−Emitter
Voltage
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 10 mA, V
CE
= 5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 V, f = 1.0 MHz)
Noise Figure
(I
C
= 0.2 mA, V
CE
= 5.0 Vdc, R
S
= 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
f
T
C
obo
NF
100
−
−
−
−
−
−
4.5
10
MHz
pF
dB
h
FE
−
−
200
420
V
CE(sat)
−
−
−
−
580
−
150
270
290
520
−
−
0.7
0.9
660
−
−
−
450
800
0.25
0.6
−
−
700
770
V
−
V
(BR)CEO
65
45
30
V
(BR)CES
80
50
30
V
(BR)CBO
80
50
30
V
(BR)EBO
6.0
6.0
5.0
I
CBO
−
−
−
−
−
−
−
−
−
−
15
5.0
nA
mA
−
−
−
−
−
−
V
−
−
−
−
−
−
V
−
−
−
−
−
−
V
V
Symbol
Min
Typ
Max
Unit
V
BE(sat)
V
V
BE(on)
mV
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2
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series,
NSVBC847BDW1T2G, BC848CDW1T1G
TYPICAL CHARACTERISTICS
−
BC846BDW1T1G, SBC846BDW1T1G
600
V
CE
= 5 V
h
FE
, DC CURRENT GAIN
h
FE
, DC CURRENT GAIN
500
150°C
400
300
200
100
0
0.001
25°C
500
400
300
200
100
0
0.001
25°C
150°C
600
V
CE
= 10 V
−55°C
−55°C
0.01
0.1
1
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain at V
CE
= 5 V
V
CE(sat)
, COLL−EMITT SATURATION VOLTAGE (V)
V
CE(sat)
, COLL−EMITT SATURATION VOLTAGE (V)
Figure 2. DC Current Gain at V
CE
= 10 V
0.25
0.20
0.15
0.10
0.05
I
C
/I
B
= 10
0.3
0.25
0.2
0.15
0.1
0.05
0
0.0001
25°C
150°C
I
C
/I
B
= 20
150°C
25°C
−55°C
−55°C
0.00
0.0001
0.001
0.01
0.1
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 3. V
CE(sat)
at I
C
/I
B
= 10
V
BE(sat)
, BASE−EMITT SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITT SATURATION VOLTAGE (V)
Figure 4. V
CE(sat)
at I
C
/I
B
= 20
1.10
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
I
C
/I
B
= 10
−55°C
25°C
1.10
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
I
C
/I
B
= 20
−55°C
25°C
150°C
150°C
0.20
0.0001
0.001
0.01
0.1
0.20
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 5. V
BE(sat)
at I
C
/I
B
= 10
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3
Figure 6. V
BE(sat)
at I
C
/I
B
= 20
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series,
NSVBC847BDW1T2G, BC848CDW1T1G
TYPICAL CHARACTERISTICS
−
BC846BDW1T1G, SBC846BDW1T1G
1.20
V
BE(on)
, BASE−EMITTER VOLTAGE
(V)
1.10
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.0001
0.001
0.01
150°C
25°C
−55°C
1000
f
T
, CURRENT−GAIN
−
BANDWIDTH
PRODUCT
V
CE
= 5 V
V
CE
= 10 V
T
A
= 25°C
100
0.1
10
0.1
1
10
100
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 7. V
BE(on)
at V
CE
= 5 V
Figure 8. Current
−
Gain
−
Bandwidth Product
10
T
A
= 25°C
V
CE
, COLLECTOR−EMITTER
VOLTAGE (V)
C, CAPACITANCE (pF)
C
ib
2
1.6
1.2
0.8
0.4
0
0.01
T
A
= 25°C
I
C
=
10 mA
I
C
=
50 mA
I
C
=
100 mA
I
C
=
20 mA
C
ob
1
0.1
1
10
100
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
I
B
, BASE CURRENT (mA)
Figure 9. Capacitances
Figure 10. Collector Saturation Region
q
VB
, TEMPERATURE COEFFICIENT
(mV/°C)
−0.2
−0.6
−1
−1.4
−1.8
−2.2
−2.6
−3
0.1
V
CE
= 5 V
q
VB
, for V
BE
−55°C
to 150°C
Figure 11. Base−Emitter Temperature Coefficient
1
10
I
B
, BASE CURRENT (mA)
100
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BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series,
NSVBC847BDW1T2G, BC848CDW1T1G
TYPICAL CHARACTERISTICS
−
BC847BDW1T1G, SBC847BDW1T1G, NSVBC847BDW1T2G
600
500
400
300
200
100
0
0.0001
25°C
150°C
h
FE
, DC CURRENT GAIN
600
500
400
25°C
300
200
100
0
0.0001
−55°C
150°C
V
CE
= 5 V
V
CE
= 10 V
h
FE
, DC CURRENT GAIN
−55°C
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 12. DC Current Gain at V
CE
= 5 V
V
CE(sat)
, COLL−EMITT SATURATION VOLTAGE (V)
0.25
0.20
0.15
0.10
0.05
−55°C
0.00
0.0001
0.001
0.01
I
C
, COLLECTOR CURRENT (A)
0.1
V
CE(sat)
, COLL−EMITT SATURATION VOLTAGE (V)
0.30
0.25
0.20
0.15
0.10
0.05
Figure 13. DC Current Gain at V
CE
= 10 V
I
C
/I
B
= 10
I
C
/I
B
= 20
25°C
25°C
150°C
150°C
−55°C
0.001
0.01
I
C
, COLLECTOR CURRENT (A)
0.1
0.00
0.0001
Figure 14. V
CE
at I
C
/I
B
= 10
Figure 15. V
CE
at I
C
/I
B
= 20
V
BE(sat)
, BASE−EMITT SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITT SATURATION VOLTAGE (V)
1.20
1.00
0.80
0.60
0.40
0.20
I
C
/I
B
= 10
1.20
1.00
0.80
0.60
0.40
0.20
I
C
/I
B
= 20
−55°C
25°C
150°C
−55°C
25°C
150°C
0.00
0.0001
0.001
0.01
0.1
0.00
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 16. V
BE(sat)
at I
C
/I
B
= 10
Figure 17. V
BE(sat)
at I
C
/I
B
= 20
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