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BC856B-HF

Description
Bipolar Transistors - BJT TRANSISTOR PNP -65V -0.1A HALOGEN-FREE
Categorysemiconductor    Discrete semiconductor   
File Size162KB,6 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance
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Bipolar Transistors - BJT TRANSISTOR PNP -65V -0.1A HALOGEN-FREE

BC856B-HF Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerComchip Technology
Product CategoryBipolar Transistors - BJT
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max- 65 V
Collector- Base Voltage VCBO- 80 V
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 0.65 V
Maximum DC Collector Current- 0.1 A
Gain Bandwidth Product fT100 MHz
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
DC Current Gain hFE Max475
PackagingCut Tape
PackagingMouseReel
PackagingReel
DC Collector/Base Gain hfe Min220
Pd - Power Dissipation250 mW
Factory Pack Quantity3000
Unit Weight0.003951 oz
General Purpose Transistor
BC856-HF Thru. BC858-HF Series
(PNP)
RoHS Device
Halogen Free
Features
- Ideally suited for automatic insertion
- Power dissipation
P
CM
: 0.25W (@T
A
=25°C)
- Low current.(max. 100mA)
- Collector-base voltage
V
CBO
: BC856 = -80V
BC857 = -50V
BC858 = -30V
- Operating and storage junction temperature
range: T
J
, T
STG
= -65 to +150°C
0.059(1.50)
0.043(1.10)
SOT-23
0.122(3.10)
0.106(2.70)
3
1
0.079(2.00)
0.071(1.80)
2
0.004(0.10)
Typ.
Mechanical data
- Case: SOT-23, molded plastic.
- Terminals: Solderable per MIL-STD-750,
method 2026.
0.039(1.00)
Typ.
0.102(2.60)
0.087(2.20)
0.004(0.10)
0.001(0.02)
0.016(0.40)
Typ.
Circuit diagram
- 1.BASE
- 2.EMITTER
- 3.COLLECTOR
1
3
Dimensions in inches and (millimeter)
2
Maximum Ratings
(at Ta=25°C unless otherwise noted)
Parameter
BC856
BC857
BC858
BC856
BC857
BC858
Symbol
Value
-80
-50
-30
-65
-45
-30
-5
-0.1
250
-65 to +150
-65 to +150
Unit
Collector-Base voltage
V
CBO
V
Collector-Emitter voltage
V
CEO
V
Emitter-Base voltage
Collector current-continuous
Collector dissipation
Junction temperature range
Storage temperature range
V
EBO
I
C
P
C
T
J
T
STG
V
A
mW
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTR16
REV:A
Page 1
Comchip Technology CO., LTD.
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