BD243, BD243A, BD243B, BD243C
NPN SILICON POWER TRANSISTORS
Designed for Complementary Use with the
BD244 Series
65 W at 25°C Case Temperature
6 A Continuous Collector Current
10 A Peak Collector Current
Customer-Specified Selections Available
“-S” Suffix Added to Part Number Indicates
RoHS Compliance*
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-emitter voltage (R
BE
= 100
Ω)
BD243A
BD243
SYMBOL
V
CER
VALUE
55
70
115
45
60
100
5
6
3
2
80
V
CEO
V
EBO
I
CM
P
tot
½LI
C
2
T
stg
T
L
T
j
P
tot
I
B
I
C
V
V
A
A
A
90
V
UNIT
BD243C
Collector-emitter voltage (I
C
= 30 mA)
Emitter-base voltage
BD243A
BD243
BD243B
BD243C
BD243B
Continuous collector current
Continuous base current
Peak collector current (see Note 1)
10
65
62.5
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
W
-65 to +150
-65 to +150
250
mJ
°C
°C
W
Lead temperature 3.2 mm from case for 10 seconds
°C
NOTES: 1.
2.
3.
4.
This value applies for t
p
≤
0.3 ms, duty cycle
≤
10%.
Derate linearly to 150°C case temperature at the rate of 0.52 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 0.4 A, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= 20 V.
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
JUNE 1973 - REVISED NOVEMBER 2012
Specifications are subject to change without notice.
1
BD243, BD243A, BD243B, BD243C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BD243
V
(BR)CEO
I
C
= 30 mA
(see Note 5)
V
CE
= 55 V
I
CES
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
V
CE
= 70 V
V
CE
= 90 V
V
CE
= 115 V
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE
h
fe
V
CE
= 30 V
V
CE
= 60 V
V
EB
=
V
CE
=
V
CE
=
I
B
=
V
CE
=
5V
4V
4V
1A
4V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
I
C
= 0
I
C
= 0.3 A
I
C
=
I
C
=
I
C
=
3A
6A
6A
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
f = 1 kHz
f = 1 MHz
20
3
30
15
1.5
2
V
V
I
B
= 0
BD243A
BD243B
BD243C
BD243
BD243A
BD243B
BD243C
BD243/243A
BD243B/243C
MIN
45
60
80
100
0.4
0.4
0.4
0.4
0.7
0.7
1
mA
mA
mA
V
TYP
MAX
UNIT
V
CE
= 10 V
V
CE
= 10 V
I
C
= 0.5 A
I
C
= 0.5 A
|
h
fe
|
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1.92
62.5
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= 1 A
V
BE(off)
= -3.7 V
I
B(on)
= 0.1 A
R
L
= 20
Ω
†
MIN
I
B(off)
= -0.1 A
t
p
= 20 µs, dc
≤
2%
TYP
0.3
1
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
JUNE 1973 - REVISED
NOVEMBER 2012
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BD243, BD243A, BD243B, BD243C
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
V
CE
= 4 V
T
C
= 25°C
t
p
= 300 µs, duty cycle < 2%
h
FE
- DC Current Gain
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
1000
TCS633AH
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
10
TCS633AE
I
C
= 300 mA
I
C
= 1 A
I
C
= 3 A
I
C
= 6 A
1·0
100
10
0·1
1·0
0·1
1·0
I
C
- Collector Current - A
10
0·01
0·001
0·01
0·1
I
B
- Base Current - A
1·0
10
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
1·2
V
CE
= 4 V
T
C
= 25°C
V
BE
- Base-Emitter Voltage - V
1·1
TCS633AF
1·0
0·9
0·8
0·7
0·6
0·1
1·0
I
C
- Collector Current - A
10
Figure 3.
JUNE 1973 - REVISED
NOVEMBER 2012
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BD243, BD243A, BD243B, BD243C
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
100
SAS633AD
I
C
- Collector Current - A
10
t
p
= 300 µs, d = 0.1 = 10%
t
p
= 1 ms, d = 0.1 = 10%
t
p
= 10 ms, d = 0.1 = 10%
DC Operation
1·0
0·1
BD243
BD243A
BD243B
BD243C
10
100
1000
0·01
1·0
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
80
P
tot
- Maximum Power Dissipation - W
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
TIS633AB
Figure 5.
4
JUNE 1973 - REVISED
NOVEMBER 2012
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
Embedded System
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