Important notice
Dear Customer,
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DISCRETE SEMICONDUCTORS
DATA SHEET
PMEGXX10BEA;
PMEGXX10BEV
1 A very low V
F
MEGA Schottky
barrier rectifier
Product data sheet
Supersedes data of 2004 Apr 02
2004 Jun 14
NXP Semiconductors
Product data sheet
1 A very low V
F
MEGA Schottky
barrier rectifier
FEATURES
•
Forward current: 1 A
•
Reverse voltages: 20 V, 30 V, 40 V
•
Very low forward voltage
•
Ultra small and very small plastic SMD package
•
Power dissipation comparable to SOT23.
APPLICATIONS
•
High efficiency DC-to-DC conversion
•
Voltage clamping
•
Protection circuits
•
Low voltage rectification
•
Blocking diodes
•
Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a very small SOD323
(SC-76) and ultra small SOT666 SMD plastic package.
MARKING
TYPE NUMBER
PMEG2010BEA
PMEG3010BEA
PMEG4010BEA
PMEG2010BEV
PMEG3010BEV
PMEG4010BEV
MARKING CODE
V1
V2
V3
G6
G5
G4
6
5
4
PMEGXX10BEA;
PMEGXX10BEV
QUICK REFERENCE DATA
SYMBOL
I
F
V
R
PINNING
PIN
PMEGXX10BEA
(see Fig.1)
1
2
PMEGXX10BEV
(see Fig.2)
1, 2, 5, 6
3, 4
cathode
anode
cathode
anode
DESCRIPTION
PARAMETER
forward current
reverse voltage
1
20; 30; 40
MAX.
UNIT
A
V
1
2
1
2
sym001
The marking bar indicates the cathode.
Fig.1
Simplified outline (SOD323; SC-76) and
symbol.
1, 2
5, 6
3, 4
sym038
1
2
3
Fig.2 Simplified outline (SOT666) and symbol.
2004 Jun 14
2
NXP Semiconductors
Product data sheet
1 A very low V
F
MEGA Schottky
barrier rectifier
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PMEGXX10BEA
PMEGXX10BEV
−
DESCRIPTION
plastic surface mounted package; 2 leads
plastic surface mounted package; 6 leads
PMEGXX10BEA;
PMEGXX10BEV
VERSION
SOD323
SOT666
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
PARAMETER
continuous reverse voltage
PMEG2010BEA/PMEG2010BEV
PMEG3010BEA/PMEG3010BEV
PMEG4010BEA/PMEG4010BEV
I
F
I
FRM
I
FSM
T
j
T
amb
T
stg
Notes
1. Refer to SOD323 (SC-76) and SOT666 standard mounting conditions.
2. Only valid if pins 3 and 4 are connected in parallel (SOT666 package).
3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
P
R
are a significant part of the total power losses. Nomograms for determining the reverse power losses P
R
and I
F(AV)
rating will be available on request.
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
junction temperature
operating ambient temperature
storage temperature
T
s
≤
55
°C;
note 1
t
p
≤
1 ms;
δ ≤
0.5; note 2
t
p
= 8 ms; square wave;
note 2
note 3
note 3
−
−
−
−
−
−
−
−65
−65
20
30
40
1
3.5
10
150
+150
+150
V
V
V
A
A
A
°C
°C
°C
CONDITIONS
MIN.
MAX.
UNIT
2004 Jun 14
3
NXP Semiconductors
Product data sheet
1 A very low V
F
MEGA Schottky
barrier rectifier
THERMAL CHARACTERISTICS
SYMBOL
PMEGXX10BEA (SOD323)
R
th(j-a)
R
th(j-s)
thermal resistance from junction to
ambient
thermal resistance from junction to
soldering point
in free air; notes 1 and 2
in free air; notes 2 and 3
note 4
PARAMETER
CONDITIONS
PMEGXX10BEA;
PMEGXX10BEV
VALUE
UNIT
450
210
90
K/W
K/W
K/W
PMEGXX10BEV (SOT666)
R
th(j-a)
R
th(j-s)
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
P
R
are a significant part of the total power losses. Nomograms for determining the reverse power losses P
R
and I
F(AV)
rating will be available on request.
3. Device mounted on an FR4 printed-circuit board with copper clad 10
×
10 mm.
4. Solder point of cathode tab.
5. Refer to SOT666 standard mounting conditions.
6. Only valid if pins 3 and 4 are connected in parallel (SOT666 package).
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
PMEG2010BEA/ PMEG3010BEA/ PMEG4010BEA/
PMEG2010BEV PMEG3010BEV PMEG4010BEV UNIT
TYP.
V
F
forward voltage
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 500 mA
I
F
= 1 000 mA
I
R
continuous
reverse current
V
R
= 10 V; note 1
V
R
= 20 V; note 1
V
R
= 30 V; note 1
V
R
= 40 V; note 1
C
d
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
diode capacitance
V
R
= 1 V; f = 1 MHz
90
150
210
280
355
420
15
40
−
−
66
MAX.
130
190
240
330
390
500
40
200
−
−
80
TYP.
90
150
215
285
380
450
12
−
40
−
55
MAX.
130
200
250
340
430
560
30
−
150
−
70
TYP.
95
155
220
295
420
540
7
−
−
30
43
MAX.
130
210
270
350
470
640
20
−
−
100
50
mV
mV
mV
mV
mV
mV
μA
μA
μA
μA
pF
thermal resistance from junction to
ambient
thermal resistance from junction to
soldering point
in free air; notes 2 and 5
in free air; notes 2 and 6
note 4
405
215
80
K/W
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
2004 Jun 14
4
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