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DB3J201K0L

Description
Schottky Diodes & Rectifiers SCHOTTKY BARRIER FLT LD 2.0x2.1mm
CategoryDiscrete semiconductor    diode   
File Size517KB,5 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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Schottky Diodes & Rectifiers SCHOTTKY BARRIER FLT LD 2.0x2.1mm

DB3J201K0L Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionSC-85, 3 PIN
Reach Compliance Codeunknown
ECCN codeEAR99
Samacsys DescriptionDB3J201K0L, Schottky Diode, 0.5A max, 20V 4.3ns, 3-Pin, SMini3 F2 B
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.4 V
frequency bandULTRA HIGH FREQUENCY
JESD-30 codeR-PDSO-F3
Maximum non-repetitive peak forward current3 A
Number of components1
Number of terminals3
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Maximum output current0.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage20 V
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
DB3J201K
Silicon epitaxial planar type
For high frequency rectification
DB3X201K in SMini3 type package
Features
Low forward voltage V
F
Small reverse current I
R
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: 3B
Packaging
DB3J201K0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
1: Anode
2: N.C.
3: Cathode
Panasonic
JEITA
Code
3
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Non-repetitive peak forward surge current
*1
Junction temperature
Operating ambient temperature
Storage temperature
Symbol
V
R
V
RRM
I
F(AV)
I
FSM
T
j
T
opr
T
stg
Rating
20
20
500
3
125
–40 to +85
–55 to +125
Unit
V
V
mA
A
°C
°C
°C
SMini3-F2-B
SC-85
Note) *1: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
1
2
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*1
Symbol
V
F1
V
F2
I
R1
I
R2
C
t
t
rr
I
F
= 10 mA
I
F
= 500 mA
V
R
= 5 V
V
R
= 10 V
V
R
= 10 V, f = 1 MHz
I
F
= I
R
= 100 mA, I
rr
= 0.1
×
I
R
, R
L
= 100
12
4.3
Conditions
Min
Typ
Max
0.4
0.55
1
10
Unit
V
mA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 400 MHz
*1: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
Output Pulse
t
I
F
t
rr
t
A
V
R
Wave Form Analyzer
(SAS-8130)
R
i
= 50
Ver. CED
90%
t
p
= 2
µs
t
r
= 0.35 ns
δ
= 0.05
Pulse Generator
(PG-10N)
R
s
= 50
Publication date: May 2013
I
rr
=
0.1
×
I
R
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100
1

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