2SK3761 datasheet, PDF - EEWORLD Datasheet

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2SK3761: DescriptionTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS?); CategoryDiscrete semiconductor The transistor; File Size89KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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2SK3761 Overview

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS?)

2SK3761 Parametric

Parameter Name	Attribute value
Parts packaging code	TO-220AB
package instruction	,
Contacts	3
Reach Compliance Code	unknow
Configuration	Single
Maximum drain current (Abs) (ID)	6 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	74 W
surface mount	NO
Base Number Matches	1

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2SK3761

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSⅥ)

2SK3761

unit：½½

Switching Regulator Applications

3.84±0.2

10.5 max

4.7max

4.7 max

1.3

6.6 max

6.6 max.

•

Low drain-source ON resistance: R

DS (ON)

= 0.9Ω (typ.)

High forward transfer admittance: |Y

| = 5.0S (typ.)

Low leakage current: I

DSS

= 100

μA

= 600 V)

Enhancement-mode: V

= 2.0~4.0 V (V

= 10 V, I

= 1 mA)

1.3

13.4

min.

13.4

min

3.9 max

3.9 max.

Maximum Ratings

(Ta

25°C)

Characteristics

Drain-source voltage

Drain-gate voltage (R

20 kΩ)

Gate-source voltage

Drain current

(Note 1)

Symbol

DSS

DGR

GSS

A S

stg

Pulse (t

1 ms)

(Note 1)

Rating

600

±30

7.4

150

-55~150

°C

Unit

15.6

max.

15.6

max

2.7

1.5

max

1.5

max

0.81

0.81 max

0.45

2.7

2.54

2.7

Drain power dissipation (Tc

25°C)

Single pulse avalanche energy

(Note 2)

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Gate

Drain(HEAT SINK)

Source

JEDEC

JEITA

TOSHIBA

TO-220AB

SC-46

―

Thermal Characteristics

Characteristics

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Symbol

th (ch-c)

th (ch-a)

Max

1.68

83.3

Unit

°C/W

Weight : 2.0g(typ.)

Note 1: Please use devices on conditions that the channel temperature is below 150°C.

Note 2: V

90 V, T

25°C(initial), L

2.6 mH, I

6 A, R

Ω

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

2004-02-26

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