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8EWF12STRPBF

Description
8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA
CategoryDiscrete semiconductor    diode   
File Size239KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

8EWF12STRPBF Overview

8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA

8EWF12STRPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Reach Compliance Code_compli
Other featuresFREEWHEELING DIODE
applicationFAST SOFT RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
Maximum reverse current100 µA
Maximum reverse recovery time0.27 µs
surface mountYES
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
Base Number Matches1
Bulletin I2203 03/05
QUIET
IR
Series
8EWF12S
SURFACE MOUNTABLE FAST
SOFT RECOVERY DIODE
Lead-Free ("PbF" suffix)
V
F
t
rr
< 1.3V @ 8A
= 80ns
V
RRM
= 1200V
Description/ Features
The 8EWF12SPbF fast soft recovery
QUIET
IR
rectifier series has been optimized for combined
short reverse recovery time, low forward voltage
drop and low leakage current
The glass passivation ensures stable reliable
operation in the most severe temperature and
power cycling conditions.
Typical applications are both:
Output rectification and freewheeling diode
in inverters, choppers and converters.
Input rectifications where severe
restrictions on conducted EMI should be met.
Major Ratings and Characteristics
Characteristics
I
F(AV)
Sinusoidal waveform
V
RRM
I
FSM
V
F
t
rr
T
J
@ 8 A, T
J
= 25°C
@ 1A, 100A/µs
range
Package Outline
Units
A
V
A
V
ns
°C
Values
8
1200
170
1.3
80
- 40 to 150
TO-252AA (D-Pak)
www.irf.com
1

8EWF12STRPBF Related Products

8EWF12STRPBF 8EWF12STR 8EWF12S 8EWF12STRLPBF 8EWF12STRRPBF
Description 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-252AA
Is it Rohs certified? conform to incompatible incompatible - -
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) - -
Reach Compliance Code _compli compli compli - -
Other features FREEWHEELING DIODE FREEWHEELING DIODE FREEWHEELING DIODE - -
application FAST SOFT RECOVERY FAST SOFT RECOVERY FAST SOFT RECOVERY - -
Shell connection CATHODE CATHODE CATHODE - -
Configuration SINGLE SINGLE SINGLE - -
Diode component materials SILICON SILICON SILICON - -
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - -
Maximum forward voltage (VF) 1.3 V 1.3 V 1.3 V - -
JEDEC-95 code TO-252AA TO-252AA TO-252AA - -
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 - -
JESD-609 code e3 e0 e0 - -
Humidity sensitivity level 1 1 1 - -
Maximum non-repetitive peak forward current 200 A 200 A 200 A - -
Number of components 1 1 1 - -
Phase 1 1 1 - -
Number of terminals 2 2 2 - -
Maximum operating temperature 150 °C 150 °C 150 °C - -
Minimum operating temperature -40 °C -40 °C -40 °C - -
Maximum output current 8 A 8 A 8 A - -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR - -
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - -
Peak Reflow Temperature (Celsius) 260 260 260 - -
Certification status Not Qualified Not Qualified Not Qualified - -
Maximum repetitive peak reverse voltage 1200 V 1200 V 1200 V - -
Maximum reverse current 100 µA 100 µA 100 µA - -
Maximum reverse recovery time 0.27 µs 0.27 µs 0.27 µs - -
surface mount YES YES YES - -
Terminal surface MATTE TIN OVER NICKEL TIN LEAD Tin/Lead (Sn/Pb) - -
Terminal form GULL WING GULL WING GULL WING - -
Terminal location SINGLE SINGLE SINGLE - -
Maximum time at peak reflow temperature 30 NOT SPECIFIED NOT SPECIFIED - -
Base Number Matches 1 1 1 - -
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