R1122N SERIES
LOW NOISE 150mA LDO REGULATOR
NO.EA-060-111027
OUTLINE
The R1122N Series are CMOS-based voltage regulator ICs with high output voltage accuracy, extremely low
supply current, low ON-resistance, and high Ripple Rejection. Each of these voltage regulator ICs consists of a
voltage reference unit, an error amplifier, resistors, a current limit circuit, and a chip enable circuit. These ICs
perform with low dropout voltage and a chip enable function.
The line transient response and load transient response of the R1122N Series are excellent, thus these ICs
are very suitable for the power supply for hand-held communication equipment.
The output voltage of these ICs is fixed with high accuracy. Since the package for these ICs is SOT-23-5
(Mini-mold) package , high density mounting of the ICs on boards is possible.
FEATURES
•
•
•
•
•
•
•
•
•
•
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Supply Current ................................................................ Typ. 100μA
Standby Mode Current .................................................. Typ. 0.1μA
Dropout Voltage .............................................................. Typ. 0.19V (I
OUT
=100mA
3.0V Output type)
Ripple Rejection.............................................................. Typ. 80dB(f=1kHz)
Temperature-Drift Coefficient of Output Voltage ............. Typ.
±100ppm/°C
Line Regulation ............................................................... Typ. 0.05%/V
Output Voltage Accuracy.................................................
±2.0%
Output Voltage Range..................................................... 1.5V to 5.0V (0.1V steps)
(
For other voltages, please refer to MARK INFORMATIONS.)
Package ........................................................................ SOT-23-5 (Mini-mold)
Built-in chip enable circuit ( 2 types; A: active “Low”, B: active “High”)
Built-in fold-back protection circuit .................................. Short Current Typ.30mA
Pin-out............................................................................. Similar to the TK112,TK111
Ceramic Capacitors Recommended to be used with this IC
APPLICATIONS
•
Power source for cellular phones such as GSM, CDMA, PCS and so forth.
•
Power source for domestic appliances such as cameras, VCRs and camcorders.
•
Power source for battery-powered equipment.
1
R1122N
PIN CONFIGURATION
SOT-23-5
5
4
(mark side)
1
2
3
PIN DESCRIPTION
Pin No
1
2
3
4
5
Symbol
V
OUT
GND
V
DD
CE
or CE
Description
Output pin
Ground Pin
Input Pin
Chip Enable Pin
No Connection
NC
ABSOLUTE MAXIMUM RATINGS
Symbol
V
IN
V
CE
V
OUT
I
OUT
P
D
Topt
Tstg
Input Voltage
Input Voltage(
CE
or CE Pin)
Output Voltage
Output Current
Power Dissipation (SOT-23-5)
∗
Operating Temperature Range
Storage Temperature Range
Item
Rating
7.0
-0.3 ~ V
IN
+0.3
-0.3 ~ V
IN
+0.3
200
420
-40 ~ 85
-55 ~ 125
Unit
V
V
V
mA
mW
°C
°C
∗)
For Power Dissipation, please refer to PACKAGE INFORMATION.
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the
permanent damages and may degrade the life time and safety for both device and system using the device
in the field.
The functional operation at or over these absolute maximum ratings is not assured.
3
R1122N
ELECTRICAL CHARACTERISTICS
•
R1122Nxx1A
Symbol
V
OUT
I
OUT
ΔV
OUT
/ΔI
OUT
V
DIF
I
SS
Istandby
ΔV
OUT
/ΔV
IN
RR
V
IN
ΔV
OUT
/
ΔT
opt
I
SC
R
PU
Topt=25°C
Item
Output Voltage
Output Current
Load Regulation
Dropout Voltage
Supply Current
Supply Current (Standby)
Line Regulation
Ripple Rejection
Input Voltage
Output Voltage
Temperature Coefficient
Short Current Limit
Conditions
V
IN
=
Set V
OUT
+
1V
1mA
<
I
OUT
<
30mA
=
=
V
IN
=
Set V
OUT
+
1V
When V
OUT
=
Set V
OUT
-0.1V
V
IN
=
Set V
OUT
+ 1V
1mA
<
I
OUT
<
80mA
=
=
Min.
V
OUT
×0.98
150
Typ.
Max.
V
OUT
×1.02
Unit
V
mA
12
40
mV
Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
V
IN
=
Set V
OUT
+
1V
V
IN
=
V
CE
=
Set V
OUT
+
1V
Set V
OUT
+0.5V
<
V
IN
<
6.0V
=
=
I
OUT
=
30mA
f = 1kHz, Ripple 0.5Vp-p
V
IN
= Set V
OUT
+ 1V
2.0
I
OUT
=
30mA
−40°C
<
Topt
<
85°C
=
=
V
OUT
=
0V
2.5
±100
30
5.0
10.0
100
0.1
0.05
80
6.0
170
1.0
0.20
μA
μA
%/V
dB
V
ppm/°C
mA
MΩ
CE
Pull-up Resistance
CE
Input Voltage “H”
CE
Input Voltage “L”
V
CEH
V
CEL
en
1.5
0.00
BW
=
10Hz to 100kHz
30
V
IN
0.25
V
V
μ
Vrms
Output Noise
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
4
R1122N
•
R1122Nxx1B
Symbol
V
OUT
I
OUT
Δ
V
OUT
/
Δ
I
OUT
Topt=25°C
Item
Output Voltage
Output Current
Load Regulation
Dropout Voltage
Supply Current
Supply Current (Standby)
Line Regulation
Ripple Rejection
Input Voltage
Output Voltage
Temperature Coefficient
Short Current Limit
CE Pull-down Resistance
CE Input Voltage “H”
CE Input Voltage “L”
Output Noise
Conditions
V
IN
=
Set V
OUT
+
1V
1mA
<
I
OUT
<
30mA
=
=
V
IN
=
Set V
OUT
+
1V
When V
OUT
=
Set V
OUT
-0.1V
V
IN
=
Set V
OUT
+
1V
1mA
<
I
OUT
<
80mA
=
=
Min.
V
OUT
×
0.98
150
Typ.
Max.
V
OUT
×
1.02
Unit
V
mA
12
40
mV
V
DIF
I
SS
Istandby
Δ
V
OUT
/
Δ
V
IN
Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
V
IN
=
Set V
OUT
+
1V
V
IN
=
Set V
OUT
+
1V
V
CE
=GND
Set V
OUT
+
0.5V
<
V
IN
<
6.0V
=
=
I
OUT
=
30mA
f = 1kHz, Ripple 0.5Vp-p
V
IN
= Set V
OUT
+ 1V
2.0
I
OUT
=
30mA
−
40
°
C
<
Topt
<
85
°
C
=
=
V
OUT
=
0V
2.5
1.5
0.00
BW
=
10Hz to 100kHz
30
±
100
100
0.1
0.05
80
170
1.0
0.20
μ
A
μ
A
%/V
dB
RR
V
IN
Δ
V
OUT
/
Δ
T
opt
6.0
V
ppm/
°
C
mA
I
SC
R
PD
V
CEH
V
CEL
en
30
5.0
10.0
V
IN
0.25
M
Ω
V
V
μ
Vrms
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
5