GC4902 – GC4946
TM
®
CONTROL DEVICES – BEAMLEAD PIN DIODES
RoHS Compliant
KEY FEATURES
Wide Bandwidth / High Switching
Speed
DESCRIPTION
Semiconductor mesa beam lead PIN diodes are designed for very low inductance,
low resistance and moderately low capacitance with ultra fast switching
characteristics. The structural details include thermal oxide junction passivation thus
providing reliable operation with stable junction parameters along with ceramic
glass, which provides mechanical strength to the diode. These devices are designed
with a narrow base width, a high quality intrinsic ‘I’ layer that provides low loss, high
isolation and ultra high speed switching characteristics.
This series of diodes meets RoHS requirements per EU Directive 2002/95/EC.
The standard terminal finish is gold unless otherwise specified. Consult the
factory if you have special requirements.
www.MICROSEMI.com
5 Gram Typical Pull Strength
Very Low R
S
/C
J
(Loss/Isolation)
Products with Low Inductance
High Quality, High Resistivity
Epitaxy
Stable Low Leakage Passivation
with Rugged Glass Body
RoHS Compliant
1
1
APPLICATIONS
These high speed beam lead PIN diodes are designed for stripline and microstrip
circuits and are primarily used in shunt/series and conventional series multithrow
configurations as switching, attenuating and phase shifting elements with
frequencies extending up to Ku band.
These devices are supplied with Gold
plated terminations. Consult factory for
details.
APPLICATIONS/BENEFITS
1B
High Speed Switching
Broadband Performance
Suitable for Applications through
26 Ghz
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Maximum Leakage Current
@80% of minimum Rated V
B
Operating Temperature
Storage Temperature
Symbol
I
R
T
OP
T
STG
Value
0.5
-65 to +150
-65 to +150
Unit
uA
ºC
ºC
For the most current data, consult MICROSEMI’s website:
www.MICROSEMI.com
HU
UH
Specifications are subject to change, consult factory for the latest information.
These devices are ESD sensitive and must be handled use using ESD precautions.
GC4902 - GC4946
Copyright
2006
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
GC4902 – GC4946
TM
®
CONTROL DEVICES – BEAMLEAD PIN DIODES
RoHS Compliant
.
ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)
DC Characteristics
RF Characteristics
I
L
(db)
1
I
L
(db)
1
C
T
(pF)
R
s
(Ω)
R
s
(Ω)
T
L
(nS)
Isol (db)
1
V
b
(V)
I
F
=10mA
I
F
=50mA
Model Number
I
R
=10μA
@10V
V
r
=10V
I
F
=10mA
I
F
=50mA
F=2.2GHz
F=2.2GHz
(Min)
(Max)
(Typ)
(Typ)
(Typ)
(Typ)
(Max)
(Max)
GC4902 – 12
GC4903 – 12
GC4941 – 12
GC4942 – 12
GC4943 – 12
GC4944 – 12
GC4945 – 12
GC4946 – 12
100
100
50
50
50
50
50
50
0.025
0.030
0.060
0.040
0.030
0.025
0.022
0.020
3.0
2.5
1.5
2.0
3.0
3.5
5.5
6.5
80
80
50
45
40
35
40
40
29.0
27.8
22.0
25.0
27.5
29.0
30.5
31.0
0.26
0.22
0.13
0.17
0.26
0.30
0.46
0.55
www.MICROSEMI.com
Notes:
1) Insertion loss and Isolation are test at F = 2.2 GHz using transmission loss techniques.
PACKAGE STYLE 12
ELEC / MECH
Copyright
2006
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 2
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