MSDM50-12 datasheet, PDF - EEWORLD Datasheet

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MSDM50-12: DescriptionDiscrete Semiconductor Modules Power Module - Diode; CategoryDiscrete semiconductor diode; File Size113KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com; Environmental Compliance

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MSDM50-12 Overview

Discrete Semiconductor Modules Power Module - Diode

MSDM50-12 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Microsemi
package instruction	R-XUFM-X5
Contacts	5
Manufacturer packaging code	CASE M2-1
Reach Compliance Code	compliant
Minimum breakdown voltage	1200 V
Shell connection	ISOLATED
Configuration	BRIDGE, 6 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	R-XUFM-X5
Maximum non-repetitive peak forward current	460 A
Number of components	6
Phase	3
Number of terminals	5
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	50 A
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Maximum repetitive peak reverse voltage	1200 V
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER

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MSDM50

Glass Passivated Three

Phase Rectifier Bridge

RRM

800 to 1800V

50 Amp

Applications

Three phase rectifiers for power supplies

Rectifiers for DC motor field supplies

Battery charger rectifiers

Input rectifiers for variable frequency drives

Circuit

Module Type

TYPE

MSDM50-08

MSDM50-12

MSDM50-16

MSDM50-18

Features

Three phase bridge rectifier

Blocking voltage:800 to 1800V

Heat transfer through aluminum oxide DBC

ceramic isolated metal baseplate

Glass passivated chip

Maximum Ratings

Symbol

Item

Output current (D.C)

Forward surge current, max.

Value for fusing

Isolation Breakdown Voltage(R.M.S)

Operating Junction Temperature

Storage Temperature

To terminals(M5)

To heatsink(M5)

Approximate Weight

FSM

Visol

Tvj

Tstg

Mounting

Torque

Weight

Thermal Characteristics

Symbol

Item

th(j-c)

Thermal Impedance, max.

Electrical Characteristics

Symbol

Item

Forward Voltage Drop, max.

Repetitive Peak Reverse Current,

max.

RRM

MSDM50-Rev0

Oct, 2011

RRM

800V

1200V

1600V

1800V

RSM

900V

1300V

1700V

1900V

Conditions

Tc=110℃

t=10mS Tvj =45℃

a.c.50HZ;r.m.s.;1min

Values

460

1050

3000

-40 to +150

3±15%

5±15%

Units

℃

Module

145

Conditions

Per Module

Values

0.28

Units

℃/W

Conditions

T=25℃ I

=150A

=25℃ V

RRM

=150℃ V

RRM

1/3

Values

Min.

Typ.

1.45

Max.

1.80

0.3

Units

www.microsemi.com

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