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MJW21196

Description
Bipolar Transistors - BJT 16A 250V 200W NPN
CategoryDiscrete semiconductor    The transistor   
File Size150KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MJW21196 Overview

Bipolar Transistors - BJT 16A 250V 200W NPN

MJW21196 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor
Parts packaging codeTO-247AD
package instructionCASE 340L-02, TO-247, 3 PIN
Contacts3
Manufacturer packaging code340L-02
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)16 A
Collector-emitter maximum voltage250 V
ConfigurationSINGLE
Minimum DC current gain (hFE)8
JEDEC-95 codeTO-247AD
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)200 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)4 MHz
MJW21195 (PNP)
MJW21196 (NPN)
Silicon Power Transistors
The MJW21195 and MJW21196 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
http://onsemi.com
Total Harmonic Distortion Characterized
High DC Current Gain
h
FE
= 20 Min @ I
C
= 8 Adc
Excellent Gain Linearity
High SOA: 2.25 A, 80 V, 1 Second
Pb−Free Packages are Available*
16 AMPERES
COMPLEMENTARY
SILICON POWER TRANSISTORS
250 VOLTS, 200 WATTS
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage
1.5 V
Collector Current
Collector Current
Continuous
Peak (Note 1)
Symbol
V
CEO
V
CBO
V
EBO
V
CEX
I
C
I
B
P
D
T
J
, T
stg
Value
250
400
5.0
400
16
30
5.0
200
1.43
65 to +150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
1
2
3
TO−247
CASE 340L
MARKING DIAGRAM
Adc
W
W/°C
°C
MJW2119x
AYWWG
Base Current
Continuous
Total Power Dissipation @ T
C
= 25°C
Derate Above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
R
qJC
R
qJA
Max
0.7
40
Unit
°C/W
°C/W
x
A
Y
WW
G
1 BASE
3 EMITTER
2 COLLECTOR
= 5 or 6
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5
ms,
Duty Cycle
10%.
ORDERING INFORMATION
Device
MJW21195
MJW21195G
MJW21196
MJW21196G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Package
TO−247
TO−247
(Pb−Free)
TO−247
TO−247
(Pb−Free)
Shipping
30 Units/Rail
30 Units/Rail
30 Units/Rail
30 Units/Rail
©
Semiconductor Components Industries, LLC, 2010
March, 2010
Rev. 3
1
Publication Order Number:
MJW21195/D

MJW21196 Related Products

MJW21196 MJW21195
Description Bipolar Transistors - BJT 16A 250V 200W NPN Bipolar Transistors - BJT 16A 250V 200W PNP
Brand Name ON Semiconductor ON Semiconductor
Is it lead-free? Contains lead Contains lead
Maker ON Semiconductor ON Semiconductor
Parts packaging code TO-247AD TO-247AD
package instruction CASE 340L-02, TO-247, 3 PIN CASE 340L-02, TO-247, 3 PIN
Contacts 3 3
Manufacturer packaging code 340L-02 340L-02
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 16 A 16 A
Collector-emitter maximum voltage 250 V 250 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 8 8
JEDEC-95 code TO-247AD TO-247AD
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED 235
Polarity/channel type NPN PNP
Maximum power dissipation(Abs) 200 W 200 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 4 MHz 4 MHz
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