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BR25S320NUX-WTR

Description
EEPROM SPI BUS 32K VSON008X2030 EEPROM
Categorystorage    storage   
File Size674KB,35 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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BR25S320NUX-WTR Overview

EEPROM SPI BUS 32K VSON008X2030 EEPROM

BR25S320NUX-WTR Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeSON
package instruction2 X 3 MM, 0.60 MM HEIGHT, ROHS COMPLIANT, VSON-8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time16 weeks
Maximum clock frequency (fCLK)20 MHz
Data retention time - minimum40
Durability1000000 Write/Erase Cycles
JESD-30 codeR-PDSO-G8
length3 mm
memory density32768 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals8
word count4096 words
character code4000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize4KX8
Package body materialPLASTIC/EPOXY
encapsulated codeHVSSOP
Encapsulate equivalent codeSOLCC8,.11,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.8/5 V
Certification statusNot Qualified
Maximum seat height0.6 mm
Serial bus typeSPI
Maximum standby current0.000002 A
Maximum slew rate0.008 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width2 mm
Maximum write cycle time (tWC)5 ms
write protectHARDWARE
Datasheet
Serial EEPROM Series Standard EEPROM
SPI BUS EEPROM
BR25Sxxx-W Series
(32K 64K 128K 256K)
●General
Description
BR25Sxxx-W series is a serial EEPROM of SPI BUS interface method
●Features
High speed clock action up to 20MHz (Max.)
Wait function by HOLDB terminal
Part or whole of memory arrays settable as read only
memory area by program
1.7V to 5.5V single power source action most suitable
for battery use
Page write mode useful for initial value write at
factory shipment
Highly reliable connection by Au pad and Au wire
For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1)
Auto erase and auto end function at data rewrite
Low current consumption
At write action (5V)
: 1.5mA (Typ.)
At read action (5V)
: 1.0mA (Typ.)
At standby action (5V) : 0.1μA (Typ.)
Address auto increment function at read action
Write mistake prevention function
Write prohibition at power on
Write prohibition by command code (WRDI)
Write prohibition by WP pin
Write prohibition block setting by status registers
(BP1, BP0)
Write mistake prevention function at low voltage
Data kept for 40 years
Data rewrite up to 1,000,000 times
Data at shipment
Memory array: FFh
Status register: WPEN, BP1, BP0 : 0
●Packages
W(Typ.) x D(Typ.) x H(Max.)
SOP8
5.00mm x 6.20mm x 1.71mm
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
SOP- J8
4.90mm x 6.00mm x 1.65mm
TSSOP-B8J
3.00mm x 4.90mm x 1.10mm
SSOP-B8
3.00mm x 6.40mm x 1.35mm
MSOP8
2.90mm x 4.00mm x 0.90mm
VSON008X2030
2.00mm x 3.00mm x 0.60mm
●Page
write
Page
Part Number
●BR25Sxxx-W
Series
Capacity Bit format
32Kbit
64Kbit
128Kbit
256Kbit
4K×8
8K×8
16K×8
32K×8
32Byte
BR25S320-W
BR25S640-W
64Byte
BR25S128-W
BR25S256-W
Power source
voltage
1.7V to 5.5V
1.7V to 5.5V
1.7V to 5.5V
1.7V to 5.5V
SOP8
SOP-J8
SSOP-B8 TSSOP-B8 MSOP8
TSSOP-B8J
VSON008
X2030
○Product
structure:Silicon monolithic integrated circuit
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½14½001
○This
product is not designed protection against radioactive rays
1/31
TSZ02201-0R2R0G100330-1-2
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