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BSM30GP60

Description
IGBT Modules 600V 30A PIM
CategoryDiscrete semiconductor    The transistor   
File Size159KB,13 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSM30GP60 Overview

IGBT Modules 600V 30A PIM

BSM30GP60 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X24
Contacts24
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)70 A
Collector-emitter maximum voltage600 V
ConfigurationCOMPLEX
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X24
Number of components7
Number of terminals24
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)280 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)315 ns
Nominal on time (ton)105 ns
VCEsat-Max2.45 V
Base Number Matches1
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM30GP60
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage
Durchlaßstrom Grenzeffektivwert
RMS forward current per chip
Dauergleichstrom
DC forward current
Stoßstrom Grenzwert
surge forward current
Grenzlastintegral
I t - value
2
V
RRM
I
FRMSM
T
C
= 80°C
t
P
= 10 ms, T
vj
=
t
P
= 10 ms, T
vj
=
25°C
25°C
I
d
I
FSM
It
2
1600
40
30
300
230
450
260
V
A
A
A
A
A
2
s
As
2
t
P
= 10 ms, T
vj
= 150°C
t
P
= 10 ms, T
vj
= 150°C
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral
2
I t - value
Tc = 80 °C
t
P
= 1 ms
V
R
= 0V, t
p
= 10ms, T
vj
= 125°C
I
F
I
FRM
2
It
V
CES
Tc = 80 °C
T
C
= 25 °C
t
P
= 1 ms,
T
C
= 25°C
T
C
= 80 °C
I
C,nom.
I
C
I
CRM
P
tot
V
GES
600
30
50
60
180
+/- 20V
V
A
A
A
W
V
30
60
240
A
A
A
2
s
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Diode Brems-Chopper/ Diode Brake-Chopper
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
prepared by: Andreas Schulz
approved by: M.Hierholzer
Tc = 80 °C
t
P
= 1 ms
I
F
I
FRM
10
20
A
A
T
C
= 80 °C
T
C
= 25 °C
t
P
= 1 ms, T
C
= 80°C
T
C
= 25°C
V
CES
I
C,nom.
I
C
I
CRM
P
tot
V
GES
600
15
25
30
100
+/- 20V
V
A
A
A
W
V
date of publication:17.09.1999
revision: 4
1(11)
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