BUK7608-55A,118 datasheet, PDF

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BUK7608-55A,118: DescriptionMOSFET TAPE13 PWR-MOS; CategoryDiscrete semiconductor The transistor; File Size742KB，14 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BUK7608-55A,118 Overview

MOSFET TAPE13 PWR-MOS

BUK7608-55A,118 Parametric

Parameter Name	Attribute value
Brand Name	NXP Semiconductor
Is it Rohs certified?	conform to
Parts packaging code	D2PAK
package instruction	PLASTIC, D2PAK-3
Contacts	3
Manufacturer packaging code	SOT404
Reach Compliance Code	not_compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	670 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (Abs) (ID)	126 A
Maximum drain current (ID)	75 A
Maximum drain-source on-resistance	0.008 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	254 W
Maximum pulsed drain current (IDM)	504 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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BUK7608-55A

N-channel TrenchMOS standard level FET

Rev. 03 — 14 June 2010

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

Low conduction losses due to low

on-state resistance

Q101 compliant

Suitable for standard level gate drive

sources

Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

12 V and 24 V loads

Automotive systems

General purpose power switching

Motors, lamps and solenoids

1.4 Quick reference data

Table 1.

Symbol

tot

DSon

Quick reference data

Parameter

drain-source voltage

drain current

total power dissipation

drain-source on-state

resistance

Conditions

≥

25 °C; T

≤

175 °C

= 10 V; T

= 25 °C;

see

Figure 1;

see

Figure 3

= 25 °C; see

Figure 2

= 10 V; I

= 25 A;

= 175 °C; see

Figure 11;

see

Figure 12

= 10 V; I

= 25 A;

= 25 °C; see

Figure 11;

see

Figure 12

[1]

Min

Typ

Max Unit

254

mΩ

Static characteristics

6.8

mΩ

BUK7608-55A,118 Related Products

	BUK7608-55A,118
Description	MOSFET TAPE13 PWR-MOS
Brand Name	NXP Semiconductor
Is it Rohs certified?	conform to
Parts packaging code	D2PAK
package instruction	PLASTIC, D2PAK-3
Contacts	3
Manufacturer packaging code	SOT404
Reach Compliance Code	not_compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	670 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (Abs) (ID)	126 A
Maximum drain current (ID)	75 A
Maximum drain-source on-resistance	0.008 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	254 W
Maximum pulsed drain current (IDM)	504 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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