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ERW13-060

Description
7 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size58KB,1 Pages
ManufacturerETC
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ERW13-060 Overview

7 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB

パワーデバイス / Power Devices (IGBT)
■ IGBTモールドタイプ Molded Package Type IGBTs
電子レンジ用モールドタイプ
Molded package types, such as microwave ovens
½ 式
Device type
V
CES
V
GES
Volts
±20
±20
I
C
Cont.
Amps.
60
65
P
C
Watts
260
300
V
CE
(V
GE
=15V)
(sat)
Max.
Ic
Volts
Amps.
3.2
60
5.54
60
tf
μsec.
0.8
0.77
R
th j-c)
℃/W
0.481
0.417
パッケージ
Package
TO-3PL
TO-3PL
質 量
Net mass
Grams
9.5
9.5
Volts
1MBH60D-090A
900
1MBH65D-090A
900
■ IGBT用高速ダイオー
ド Fast Recovery Diodes for IGBT
モール
ドパッケージ FRD
Molded FRD
½ 式
Device type
ERW01-060
ERW02-060
ERW03-060
ERW04-060
ERW05-060
ERW06-060
ERW07-120
ERW08-120
ERW09-120
ERW10-120
ERW11-120
ERW12-120
ERW13-060
V
RRM
Volts
600
600
600
600
600
600
1200
1200
1200
1200
1200
1200
600
I
FM
Amps.
5(T
C
=118℃)
10(T
C
=100℃)
15(T
C
=92℃)
20(T
C
=91℃)
30(T
C
=81℃)
V
F
Volts
3 (I
F
= 5A)
3 (I
F
=10A)
3 (I
F
=15A)
3 (I
F
=20A)
3 (I
F
=30A)
trr
Switching time (Max.)
(μsec.) di/dt=100A/μs 70% recovery
0.3 (I
F
= 5A, V
R
=200V)
0.3 (I
F
=10A, V
R
=200V)
0.3 (I
F
=15A, V
R
=200V)
0.3 (I
F
=20A, V
R
=200V)
0.3 (I
F
=30A, V
R
=200V)
0.3 (I
F
=50A, V
R
=200V)
0.35 (I
F
= 2.5A, V
R
=200V)
0.35 (I
F
= 5A, V
R
=200V)
0.35 (I
F
= 8A, V
R
=200V)
0.35 (I
F
=10A, V
R
=200V)
0.35 (I
F
=15A, V
R
=200V)
0.35 (I
F
=25A, V
R
=200V)
0.3
(I
F
=50A, V
R
=200V)
パッケージ
Package
TO-220AB(single)
TO-220AB(single)
TO-220AB(single)
TO-220AB(single)
TO-220AB(single)
TO-3P(single)
TO-220AB(single)
TO-220AB(single)
TO-220AB(single)
TO-220AB(single)
TO-3P(single)
TO-3P(single)
TO-3PL
質 量
Net mass
Grams
2.0
2.0
2.0
2.0
2.0
5.5
2.0
2.0
2.0
2.0
5.5
5.5
9.5
50(T
C
=77℃)
3 (I
F
=50A)
2.5(T
C
=129℃) 3 (I
F
= 2.5A)
5(T
C
=127℃)
8(T
C
=124℃)
10(T
C
=123℃)
15(T
C
=122℃)
25(T
C
=113℃)
50(T
C
=90℃)
3 (I
F
= 5A)
3 (I
F
= 8A)
3 (I
F
=10A)
3 (I
F
=15A)
3 (I
F
=25A)
3 (I
F
=50A)
記 号 
Letter symbols
V
CES
:
コレクタ・エミッタ間電圧
V
GES
:
I
C
:
P
C
:
V
CE (sat)
:
t
on
:
t
off
:
t
f
:
ゲート・エミッタ間電圧
コレクタ電流
最大損失
コレクタ・エミッタ½和電圧
ターンオン時間
ターンオフ時間
立上り時間
Collector-to-emitter rated voltage
(Gate-to-emitter short-circuited)
Gate-to-emitter rated voltage
(Collector-to-emitter short-circuited)
Rated collector current
Maximum power dissipation
Collector-to-emitter saturation voltage
Turn-on time
Turn-off time
Fall time
14

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