BC368
BC368
B
C
TO-92
E
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.5 A.
Sourced from Process 37.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CES
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
20
25
5.0
2.0
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
BC368
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
1997
Fairchild Semiconductor Corporation
BC368
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 25 V, I
E
= 0
V
CB
= 25 V, I
E
= 0, T
A
= 150°C
V
EB
= 5.0 V, I
C
= 0
20
25
5.0
10
1.0
10
V
V
V
µA
mA
µA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 5.0 mA, V
CE
= 10 V
I
C
= 0.5 A, V
CE
= 1.0 V
I
C
= 1.0 A, V
CE
= 1.0 V
I
C
= 1.0 A, I
B
= 100 mA
I
C
= 1.0 A, V
CE
= 1.0 V
50
85
60
375
0.5
1.0
V
V
V
CE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 10 mA, V
CE
= 5.0 V,
f = 35 MHz
45
MHz
3
Typical Characteristics
V
CESAT
- COLLE CTOR-EMITTER VOLTAGE (V)
h
FE
- TYP ICAL PULSED CURRE NT GAIN
Typical Pulsed Current Gain
vs Collector Current
500
Collector-Emitter Saturation
Voltage vs Collector Current
1
β
= 10
25 °C
125 °C
- 40 °C
V
CE
= 5V
400
125 °C
0.1
300
25 °C
200
100
0
0.001
- 40 °C
0.01
I
C
0.01
0.1
- COLLECTOR CURRENT (A)
1
0.01
0.1
I
C
- COLLE CTOR CURRENT (A)
1
BC368
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
V
BE(O N)
- BASE-E MITTER ON VOLTAGE (V)
V
BESAT
- BASE-EMITTER VOLTAG E (V)
Base-Emitter Saturation
Voltage vs Collector Current
1.4
1.2
1
- 40 °C
Base-Emitter ON Voltage vs
Collector Current
1
β
= 10
0.8
- 40 °C
0.8
25 °C
0.6
25 °C
0.6
0.4
0.2
0.01
I
C
125 °C
0.4
125 °C
V
CE
= 5V
0.2
0.1
- COLLE CTOR CURRENT ( A)
1
1
10
100
I
C
- COLLECTOR CURRENT (mA)
1000
I
CBO
- COLLECTOR CURRENT (nA)
COLLECTOR-BASE CAPACITANCE (pF)
Collector-Cutoff Current
vs Ambient Temperature
100
V
CB
Collector-Base Capacitance
vs Collector-Base Voltage
40
= 20V
10
30
1
20
0.1
10
25
50
75
100
125
T
A
- AMBIENT TEMPERATURE (
°
C)
150
OBO
-
0
0
4
8
12
16
20
24
28
V
CB
- COLLECTOR-BASE VOLTAGE (V)
h
FE
- GAIN BANDWIDTH PRODUCT (MHz)
Gain Bandwidth Product
vs Collector Current
500
V
CE
= 10V
P
D
- POWER DISSIPATION (mW)
700
600
500
400
300
200
100
0
0
Power Dissipation vs
Ambient Temperature
400
300
200
100
0
TO-92
1
10
100
I
C
- COLLECTOR CURRENT (mA)
1000
25
50
75
100
TEMPER A
TURE (
o
C)
125
150
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
FAST
DISCLAIMER
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
stm32/stm8
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