ZXTDE4M832
MPPS™ Miniature Package Power Solutions
DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR
COMBINATION
SUMMARY
NPN Transistor
PNP Transistor
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP (Micro Leaded Package),
these low saturation NPN / PNP combination dual transistors offer lower on
state losses making them ideal for use in DC-DC circuits and various driving
and power-management functions.
Users will also gain several other
key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (0.9mm nom)
Reduced component count
3mm x 2mm Dual Die MLP
V
CEO
= 80V; R
SAT
= 68m ;
C
= 3.5A
V
CEO
= -70V; R
SAT
= 117m ;
C
= -2.5A
C2
C1
FEATURES
•
Low Equivalent On Resistance
•
Extremely Low Saturation Voltage
(-185mV max @ 1A--NPN)
•
H
FE
specified up to -5A
•
I
C
= -3.5A Continuous Collector Current
•
3mm x 2mm MLP
B2
B1
E2
E1
APPLICATIONS
•
DC - DC Converters
•
Charging circuits
•
Power switches
•
Motor control
PINOUT
ORDERING INFORMATION
DEVICE
ZXTDE4M832TA
ZXTDE4M832TC
REEL
7
13
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000
10000
3mm x 2mm Dual MLP
underside view
DEVICE MARKING
DE4
ISSUE 1 - JUNE 2002
1
ZXTDE4M832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current (a)(f)
Base Current
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
Storage Temperature Range
Junction Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
P
D
P
D
P
D
P
D
P
D
T
stg
T
j
NPN
100
80
7.5
5
3.5
1000
1.5
12
2.45
19.6
1
8
1.13
9
1.7
13.6
3
24
-55 to +150
150
PNP
-70
-70
-7.5
-3
-2.5
UNIT
V
V
V
A
A
mA
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)(f)
Junction to Ambient (b)(f)
Junction to Ambient (c)(f)
Junction to Ambient (d)(f)
Junction to Ambient (d)(g)
Junction to Ambient (e)(g)
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed pads attached.
The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed
pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions
with all exposed pads attached
attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed pads attached
attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
SYMBOL
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
VALUE
83.3
51
125
111
73.5
41.7
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
ISSUE 1 - JUNE 2002
2
ZXTDE4M832
TYPICAL CHARACTERISTICS
10
I
C
Collector Current (A)
1
DC
1s
I
C
Collector Current (A)
V
CE(SAT)
Limited
10
V
CE(SAT)
Limited
1
DC
1s
100ms
10ms
Note (a)(f)
Single Pulse, T
amb
=25°C
1ms
100us
0.1
Note (a)(f)
100ms
10ms
1ms
100us
Single Pulse, T
amb
=25°C
0.1
0.01
0.01
0.1
0.1
1
10
100
1
10
100
V
CE
Collector-Emitter Voltage (V)
V
CE
Collector-Emitter Voltage (V)
NPN Safe Operating Area
3.5
PNP Safe Operating Area
Max Power Dissipation (W)
2oz Cu
Note (e)(g)
T
amb
=25°C
Thermal Resistance (°C/W)
80
60
Note (a)(f)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
1oz Cu
Note (d)(f)
2oz Cu
Note (a)(f)
1oz Cu
Note (d)(g)
D=0.5
40
20
D=0.2
Single Pulse
D=0.05
D=0.1
0
100µ 1m
10m 100m
1
10
100
1k
25
50
75
100
125
150
Pulse Width (s)
Temperature (°C)
Transient Thermal Impedance
3.5
3.0
Derating Curve
225
200
175
150
125
100
75
50
25
0
0.1
Thermal Resistance (°C/W)
P
D
Dissipation (W)
2.5
2.0
1.5
1.0
0.5
0.0
0.1
T
amb
=25°C
T
j max
=150°C
Continuous
2oz copper
Note (f)
2oz copper
Note (g)
1oz copper
Note (f)
1oz copper
Note (g)
1oz copper
Note (f)
1oz copper
Note (g)
2oz copper
Note (f)
2oz copper
Note (g)
1
10
100
1
10
100
Board Cu Area (sqcm)
Board Cu Area (sqcm)
Power Dissipation v Board Area
Thermal Resistance v Board Area
ISSUE 1 - JUNE 2002
3
ZXTDE4M832
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
15
45
145
160
240
1.09
0.96
200
300
110
60
20
100
450
450
170
90
30
10
160
11.5
86
1128
18
MIN.
100
80
7.5
TYP.
180
110
8.2
25
25
25
20
60
185
200
325
1.175
1.05
900
MAX.
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
V
V
CONDITIONS.
I
C
=100 A
I
C
=10mA*
I
E
=100 A
V
CB
=80V
V
EB
=6V
V
CE
=65V
I
C
=0.1A, I
B
=10mA*
I
C
=0.5A, I
B
=50mA*
I
C
=1A, I
B
=20mA
I
C
=1.5A, I
B
=50mA
I
C
=3.5A, I
B
=300mA
I
C
=3.5A, I
B
=300mA*
I
C
=3.5A, V
CE
=2V*
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=1.5A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
MHz
pF
ns
ns
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
V
CC
=10V, I
C
=1A
I
B1
=I
B2
=25mA
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
V
BE(sat)
V
BE(on)
h
FE
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions.
ISSUE 1 - JUNE 2002
4
Wireless Connectivity
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