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CZRF52C33

Description
Zener Diodes ZENER, 200mW 33V
CategoryDiscrete semiconductor    diode   
File Size245KB,6 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance
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CZRF52C33 Overview

Zener Diodes ZENER, 200mW 33V

CZRF52C33 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerComchip Technology
package instructionR-PDSO-N2
Contacts2
Manufacturer packaging codeCASE 1005
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance80 Ω
JESD-30 codeR-PDSO-N2
JESD-609 codee4
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation0.2 W
Nominal reference voltage33 V
surface mountYES
technologyZENER
Terminal surfaceGOLD
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperature30
Maximum voltage tolerance5%
Working test current5 mA
Base Number Matches1
SMD Zener Diode
CZRF52C2 Thru. CZRF52C39
Voltage 2 to 39 Volts
Power 350 mWatts
RoHS Device
Features
- 350mW Power Dissipation.
- High Voltages from 2 ~ 39 V.
- Designed for mounting on small surface.
- Extremely thin/leadless package.
- Pb free product.
0.051(1.30)
0.043(1.10)
0.102(2.60)
0.095(2.40)
1005/SOD-323F
Mechanical data
- Case: 1005/SOD-323F Standard package
Molded plastic.
- Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
- Polarity: Indicated by cathode band.
- Weight: 0.006 gram(approx.).
0.040(1.00) Typ.
0.020(0.50) Typ.
0.035(0.90)
0.027(0.70)
0.012 (0.30) Typ.
Dimensions in inches and (millimeter)
Circuit Diagram
1
2
Maximum Rating And Electrical Characteristics
(at TA=25°C unless otherwise noted)
Parameter
Maximum Forward Voltage Drop at I
F
= 10 mA
Maximum Power Dissipation at 25 °C
Forward current , surge peak
8.3 ms single half sine-wave superimposed
on rate load( JEDEC method )
Peak ESD voltage capability (IEC 61000-4-2)
Operating Junction and Storage Temperature Range
Symbol
V
F
P
D
Value
0.9
350
Unit
V
mW
I
FSM
2.0
A
V
PV
T
J
8
-55 to +125
kV
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-A2001
REV:C
Page 1
Comchip Technology CO., LTD.
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