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2SK536-MTK-TB-E

Description
MOSFET MOSFET 0.1A 50V
Categorysemiconductor    Discrete semiconductor   
File Size189KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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2SK536-MTK-TB-E Overview

MOSFET MOSFET 0.1A 50V

2SK536-MTK-TB-E Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerON Semiconductor
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage50 V
Id - Continuous Drain Current100 mA
Rds On - Drain-Source Resistance20 Ohms
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity3000
Unit Weight0.000282 oz
Ordering number : EN2550B
2SK536
N-Channel MOSFET
50V, 100mA, Single CP
Features
http://onsemi.com
Large
|
yfs
|
Enhancement type
Low ON-state resistance
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current(Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDP
PD
Tch
Tstg
Conditions
Ratings
50
±12
100
300
200
125
--55 to +125
Unit
V
V
mA
mA
mW
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7013A-010
2.9
3
0.1
Ordering & Package Information
Device
2SK536-TB-E
Package
CP
SC-59, TO-236, SOT-23, TO-236AB
Shipping
3,000pcs./reel
memo
Pb-Free
2.5
1.5
0.5
2SK536-TB-E
Packing Type: TB
Marking
LOT No.
LOT No.
BJ
0.5
1
0.95
2
0.4
TB
1 : Gate
2 : Drain
3 : Source
CP
Electrical Connection
2
0.05
1.1
0.3
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
71713 TKIM/52899TH (KT)/4237TA, TS No.2550-1/4

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