STB34NM60ND, STF34NM60ND,
STP34NM60ND, STW34NM60ND
N-channel 600 V, 0.097
Ω
typ., 29 A FDmesh™ II Power MOSFET
(with fast diode) in D
2
PAK, TO-220FP, TO-220 and TO-247
Datasheet — production data
Features
TAB
Order codes V
DS
@T
J
max. R
DS(on)
max.
3
1
I
D
3
1
2
STB34NM60ND
STF34NM60ND
650 V
STP34NM60ND
STW34NM60ND
0.110
Ω
29 A
D PAK
TAB
2
TO-220FP
3
1
2
TO-220
TO-247
2
1
3
•
The world’s best R
DS(on)
in TO-220 amongst
the fast recovery diode devices
•
100% avalanche tested
•
Low input capacitance and gate charge
•
Low gate input resistance
•
Extremely high dv/dt and avalanche
capabilities
Figure 1. Internal schematic diagram
Applications
•
Switching applications
Description
These devices are N-channel FDmesh™ V Power
MOSFETs produced using ST’s MDmesh™ V
technology, which is based on an innovative
proprietary vertical structure. The resulting
product boasts an extremely low on-resistance
that is unrivaled among silicon-based Power
MOSFETs, and superior switching performance
with intrinsic fast-recovery body diode.
Table 1. Device summary
Order codes
STB34NM60ND
STF34NM60ND
34NM60ND
STP34NM60ND
STW34NM60ND
TO-220
TO-247
Tube
Marking
Packages
D
2
PAK
TO-220FP
Packaging
Tape and reel
October 2013
This is information on a product in full production.
DocID18099 Rev 6
1/22
www.st.com
Contents
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
.............................................. 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/22
DocID18099 Rev 6
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
V
DS
V
GS
I
D
I
D
I
DM (2)
P
TOT
V
ISO
dv/dt
(3)
T
stg
T
J
Parameter
Drain-source voltage
Gate- source voltage
Drain current (continuous) at
T
C
= 25 °C
Drain current (continuous) at
T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Insulation withstand voltage (RMS)
from all three leads to external heat
sink (t=1 s;T
C
=25 °C)
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
40
- 55 to 150
°C
150
29
18
116
190
D
2
PAK, TO-220, TO-247
600
± 25
29
(1)
18
(1)
116
(1)
40
2500
TO-220FP
V
V
A
A
A
W
V
V/ns
Unit
1. Current limited by package
2. Pulse width limited by safe operating area
3.
I
SD
≤
29 A, di/dt
≤
600 A/µs, V
DD
= 80% V
(BR)DSS
,V
DSPeak
< V
(BR)DSS
Table 3. Thermal data
Symbol
R
thj-case
R
thj-amb
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient
max
62.5
TO-220 TO-247 D
2
PAK TO-220FP
0.66
50
30
3.1
62.5
Unit
°C/W
°C/W
°C/W
R
thj-pcb(1)
Thermal resistance junction-pcb max
1. When mounted on FR-4 board of 1 inch², 2 oz Cu.
Table 4. Avalanche characteristics
Symbol
I
AR
E
AS
Parameter
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
J
max)
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Max value
7
110
Unit
A
mJ
DocID18099 Rev 6
3/22
22
Electrical characteristics
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 5. On/off states
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter
Test conditions
Min.
600
1
100
±100
3
4
0.097
5
0.110
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
Drain-source
I = 1 mA
breakdown voltage (V
GS
= 0)
D
Zero gate voltage
drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
V
DS
= 600 V
V
DS
= 600 V, T
C
=125 °C
V
GS
= ± 25 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 14.5 A
Table 6. Dynamic
Symbol
C
iss
C
oss
C
rss
C
oss eq.(1)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
g
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
V
DD
= 480 V, I
D
= 29 A,
V
GS
= 10 V,
(see
Figure 19)
f=1 MHz, open drain
V
DD
=300 V, I
D
= 14.5 A
R
G
= 4.7
Ω,
V
GS
= 10 V
(see
Figure 18
and
23)
V
DS
= 50 V, f = 1 MHz,
V
GS
= 0
Test conditions
Min.
-
-
-
V
GS
= 0, V
DS
= 0 to 480 V
-
-
-
-
-
-
-
-
-
Typ.
2785
168
5
438
30
53.4
111
61.8
80.4
16
41.4
2.87
Max.
-
-
-
-
-
-
-
-
-
-
-
-
Unit
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Ω
1. C
oss eq
. is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
4/22
DocID18099 Rev 6
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND
Electrical characteristics
Table 7. Source drain diode
Symbol
I
SD
I
SDM (1)
V
SD (2)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 29 A, V
GS
= 0
I
SD
= 29 A, V
DD
= 60 V
di/dt=100 A/µs
(see
Figure 20)
I
SD
= 29 A,V
DD
= 60 V
di/dt=100 A/µs,
T
J
= 150 °C
(see
Figure 20)
Test conditions
Min.
-
-
-
-
-
-
-
-
-
175
1.4
16
255
2.6
20
Typ.
Max.
29
116
1.6
Unit
A
A
V
ns
µC
A
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
DocID18099 Rev 6
5/22
22
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