MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CFDAAutomotive
650VCoolMOS™CFDAPowerTransistor
IPD65R420CFDA
DataSheet
Rev.2.1
Final
Automotive
650VCoolMOS™CFDAPowerTransistor
IPD65R420CFDA
1Description
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.650VCoolMOS™CFDAseries
combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh
classinnovation.Theresultingdevicesprovideallbenefitsofafast
switchingSJMOSFETwhileofferinganextremelyfastandrobustbody
diode.Thiscombinationofextremelylowswitching,commutationand
conductionlossestogetherwithhighestrobustnessmakeespecially
resonantswitchingapplicationsmorereliable,moreefficient,lighter,and
cooler.
DPAK
tab
1
2
3
Features
•Ultra-fastbodydiode
•Veryhighcommutationruggedness
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Easytouse/drive
•QualifiedaccordingtoAECQ101
•Greenpackage(RoHScompliant),Pb-freeplating,halogenfreeformold
compound
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
Applications
650VCoolMOS™CFDAisdesignedforswitchingapplications.
Table1KeyPerformanceParameters
Parameter
V
DS
RDS(on),max
Qg,typ
ID,pulse
Eoss @ 400V
Body diode di/dt
Qrr
trr
Irrm
Type/OrderingCode
IPD65R420CFDA
Value
650
0.42
90
80
2.8
500
0.7
140
8.8
Package
PG-TO 252
Unit
V
Ω
nC
A
µJ
A/µs
µC
ns
A
Marking
65F420A
RelatedLinks
-
Final Data Sheet
2
Rev.2.1,2015-02-11
650VCoolMOS™CFDAPowerTransistor
IPD65R420CFDA
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
3
Rev.2.1,2015-02-11
650VCoolMOS™CFDAPowerTransistor
IPD65R420CFDA
2Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Continuous drain current
1)
Pulsed drain current
2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
Power dissipation (SMD)
DPAK
Operating and storage temperature
Continuous diode forward current
Diode pulse current
Reverse diode dv/dt
3)
Maximum diode commutation speed
Symbol
I
D
I
D
‚
pulse
E
AS
E
AR
I
AR
dv/dt
V
GS
-20
-30
P
tot
T
j
‚T
stg
I
S
I
S
‚
pulse
dv/dt
di
f
/dt
-40
Values
Min.
Typ.
Max.
8.7
5.5
27
227
0.34
1.8
50
20
30
83.3
150
8.7
27
50
900
W
°C
A
A
V/ns
A/µs
T
C
=25°C
T
C
=25°C
V
DS
=0...400V,I
SD
≤I
D
,
T
j
=25°C
A
mJ
mJ
A
V/ns
V
V
DS
=0...400V
static
AC (f > 1 Hz)
T
C
=25°C
Unit
A
Note/TestCondition
T
C
=25°C
T
C
=100°C
T
C
=25°C
I
D
=1.8A,V
DD
=50V
I
D
=1.8A,V
DD
=50V
1)
2)
Limited by T
j max
Pulse width t
p
limited by T
j max
3)
Identical low side and high side switch with identical R
G
Final Data Sheet
4
Rev.2.1,2015-02-11
650VCoolMOS™CFDAPowerTransistor
IPD65R420CFDA
3Thermalcharacteristics
Table3ThermalcharacteristicsDPAK
Parameter
Thermal resistance, junction - case
Symbol
R
thJC
Values
Min.
Typ.
Max.
1.5
62
35
Soldering temperature, wave- &
reflowsoldering allowed
T
sold
260
°C
Unit
K/W
K/W
SMD version, device on PCB,
minimal footprint
SMD version, device on PCB, 6cm²
cooling area
reflow MSL
Note/TestCondition
Thermal resistance, junction - ambient
1)
R
thJA
1)
Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCB
is vertical without air stream cooling.
Final Data Sheet
5
Rev.2.1,2015-02-11
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