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SSM9916H

Description
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
File Size405KB,6 Pages
ManufacturerETC
Download Datasheet Compare View All

SSM9916H Overview

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

SSM9916H,J
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low on-resistance
Capable of 2.5V gate drive
Low drive current
Simple drive requirement
G
D
BV
DSS
R
DS(ON)
I
D
18V
25mΩ
35A
S
Description
Power MOSFETs from
Silicon Standard
provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
=25°C
I
D
@ T
C
=125°C
I
DM
P
D
@ T
C
=25°C
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
18
± 12
35
16
90
50
0.4
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.5
110
Unit
°C/W
°C/W
Rev.2.02 1/29/2004
www.SiliconStandard.com
1 of 6

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