BD243B, BD243C (NPN),
BD244B, BD244C (PNP)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general purpose amplifier and
switching applications.
Features
www.onsemi.com
•
High Current Gain Bandwidth Product
•
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
BD243B, BD244B
BD243C, BD244C
Collector−Base Voltage
BD243B, BD244B
BD243C, BD244C
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
80
100
V
CB
80
100
V
EB
I
C
I
CM
I
B
P
D
65
0.52
T
J
, T
stg
−65 to +150
W
W/°C
°C
5.0
6
10
2.0
Vdc
Adc
Adc
Adc
Vdc
Value
Unit
Vdc
6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
80−100 VOLTS
65 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
1
BASE
EMITTER 3
4
1
BASE
EMITTER 3
TO−220
CASE 221A
STYLE 1
1
2
3
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
1.92
Unit
°C/W
BD24xyG
AY WW
BD24xy =
A
Y
WW
G
=
=
=
=
Device Code
x = 3 or 4
y = B or C
Assembly Location
Year
Work Week
Pb−Free Package
ORDERING INFORMATION
Device
BD243BG
BD243CG
BD244BG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2014
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
BD244CG
1
November, 2014 − Rev. 15
Publication Order Number:
BD243B/D
BD243B, BD243C (NPN), BD244B, BD244C (PNP)
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 30 mAdc, I
B
= 0)
BD243B, BD244B
BD243C, BD244C
Collector Cutoff Current
(V
CE
= 60 Vdc, I
B
= 0)
BD243B, BD243C, BD244B, BD244C
Collector Cutoff Current
(V
CE
= 80 Vdc, V
EB
= 0)
BD243B, BD244B
(V
CE
= 100 Vdc, V
EB
= 0)
BD243C, BD244C
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 0.3 Adc, V
CE
= 4.0 Vdc)
(I
C
= 3.0 Adc, V
CE
= 4.0 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 6.0 Adc, I
B
= 1.0 Adc)
Base−Emitter On Voltage
(I
C
= 6.0 Adc, V
CE
= 4.0 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(I
C
= 500 mAdc, V
CE
= 10 Vdc, f
test
= 1.0 MHz)
Small−Signal Current Gain
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1.0 kHz)
f
T
3.0
h
fe
20
−
−
−
MHz
h
FE
30
15
V
CE(sat)
−
V
BE(on)
−
2.0
1.5
Vdc
−
−
Vdc
−
Symbol
V
CEO(sus)
80
100
I
CEO
−
I
CES
−
−
I
EBO
−
1.0
400
400
mAdc
0.7
mAdc
−
−
mAdc
Min
Max
Unit
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulsewidth
≤
300
ms,
Duty Cycle
≤
2.0%.
2. f
T
= h
fe
•
f
test
80
PD, POWER DISSIPATION (WATTS)
60
40
20
0
0
20
40
60
80
100
120
T
C
, CASE TEMPERATURE (°C)
140
160
Figure 1. Power Derating
www.onsemi.com
2
BD243B, BD243C (NPN), BD244B, BD244C (PNP)
V
CC
- 30 V
25
ms
+ 11 V
0
- 9.0 V
t
r
, t
f
v
10 ns
DUTY CYCLE = 1.0%
51
-4V
D
1
MUST BE FAST RECOVERY TYPE eg.
1N5825 USED ABOVE I
B
[
100 mA
MSD6100 USED BELOW I
B
[
100 mA
R
B
D
1
R
C
t, TIME (
μ
s)
SCOPE
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.06
T
J
= 25°C
V
CC
= 30 V
I
C
/I
B
= 10
t
r
t
d
@ V
BE(off)
= 5.0 V
R
B
AND R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.1
1.0
0.2
0.4 0.6
2.0
I
C
, COLLECTOR CURRENT (AMP)
4.0
6.0
Figure 2. Switching Time Test Circuit
Figure 3. Turn−On Time
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
D = 0.5
0.2
0.1
P
(pk)
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.05
0.02
R
qJC(max)
= 1.92°C/W
t
1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
qJC(t)
0.01
SINGLE PULSE
t
2
SINGLE
PULSE
DUTY CYCLE, D = t
1
/t
2
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
20
30
50
100
200 300
500
1000
Figure 4. Thermal Response
10
5.0
IC, COLLECTOR CURRENT (AMP)
3.0
2.0
T
J
= 150°C
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ T
C
= 25°C
CURVES APPLY BELOW RATED V
CEO
BD243B, BD244B
BD243C, BD244C
40
80
10
20
60
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
1.0
ms
5.0 ms
0.5 ms
1.0
0.5
0.3
0.2
0.1
5.0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150°C: T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
≤
150°C, T
J(pk)
may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 5. Active Region Safe Operating Area
www.onsemi.com
3
BD243B, BD243C (NPN), BD244B, BD244C (PNP)
5.0
3.0
2.0
1.0
t, TIME (
μ
s)
0.7
0.5
0.3
0.2
t
f
0.1
0.07
0.05
0.06
t
s
T
J
= 25°C
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
300
T
J
= 25°C
200
CAPACITANCE (pF)
C
ib
100
70
C
ob
50
0.1
1.0
0.2
0.4 0.6
2.0
I
C
, COLLECTOR CURRENT (AMP)
4.0 6.0
30
0.5
1.0
2.0 3.0
5.0
10
20
V
R
, REVERSE VOLTAGE (VOLTS)
30
50
Figure 6. Turn-Off Time
Figure 7. Capacitance
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
300
200
hFE, DC CURRENT GAIN
100
70
50
30
20
10
7.0
5.0
0.06
V
CE
= 2.0 V
T
J
= 150°C
2.0
T
J
= 25°C
1.6
I
C
= 1.0 A
1.2
2.5 A
5.0 A
25°C
0.8
- 55°C
0.4
0.1
0.2 0.3 0.4 0.6
1.0
2.0
I
C
, COLLECTOR CURRENT (AMP)
4.0
6.0
0
10
20
30
50
100
200 300
I
B
, BASE CURRENT (mA)
500
1000
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
2.0
T
J
= 25°C
1.6
V, VOLTAGE (VOLTS)
V
BE(sat)
@ I
C
/I
B
= 10
+ 2.5
+ 2.0
+ 1.5
+ 1.0
+ 25°C to + 150°C
+ 0.5
0
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
0.06
0.1
0.2
0.3
0.5
1.0
q
VB
FOR V
BE
+ 25°C to + 150°C
- 55°C to + 25°C
2.0 3.0 0.4
0.6
*q
VC
FOR V
CE(sat)
- 55°C to + 25°C
*APPLIES FOR I
C
/I
B
≤
5.0
1.2
0.8
V
BE
@ V
CE
= 4.0 V
0.4
V
CE(sat)
@ I
C
/I
B
= 10
0
0.06
0.1
0.2
0.3 0.4 0.6
1.0
2.0 3.0 4.0
6.0
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
www.onsemi.com
4
BD243B, BD243C (NPN), BD244B, BD244C (PNP)
10
3
V
CE
= 30 V
IC, COLLECTOR CURRENT (
μ
A)
10
2
T
J
= 150°C
10
1
10
0
10
-1
10
- 2
I
C
= I
CES
REVERSE
FORWARD
100°C
25°C
RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
10
M
V
CE
= 30 V
1.0
M
100
k
I
C
≈
I
CES
I
C
= 10 x I
CES
I
C
= 2 x I
CES
10
k
1.0
k
0.1
k
20
40
60
(TYPICAL I
CES
VALUES
OBTAINED FROM FIGURE 12)
80
100
120
140
160
10
- 3
- 0.3 - 0.2 - 0.1
0
+ 0.1 + 0.2 + 0.3
+ 0.4 + 0.5 + 0.6 + 0.7
V
BE
, BASE‐EMITTER VOLTAGE (VOLTS)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 12. Collector Cut-Off Region
Figure 13. Effects of Base−Emitter Resistance
www.onsemi.com
5
京公网安备 11010802033920号
EEWORLD
