Data Sheet, Rev. 2.1, Sept. 2011
BGA614
Silicon Germanium Broadband MMIC Amplifier
RF & Protection Devices
Edition 2011-09-02
Published by Infineon Technologies AG,
81726 München, Germany
©
Infineon Technologies AG 2011.
All Rights Reserved.
Attention please!
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circuits, descriptions and charts stated herein.
Information
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BGA614
BGA614, Silicon Germanium Broadband MMIC Amplifier
Revision History: 2011-09-02, Rev. 2.1
Previous Version: 2003-11-04
Page
All
5
7-8
All
Subjects (major changes since last revision)
New Chip Version with integrated ESD protection
Electrical Characteristics slightly changed
Figures updated
Document layout change
Trademarks
SIEGET
®
is a registered trademark of Infineon Technologies AG.
Data Sheet
3
Rev. 2.1, 2011-09-02
BGA614
Silicon Germanium Broadband MMIC Amplifier
1
Silicon Germanium Broadband MMIC Amplifier
Feature
• Cascadable 50
Ω-gain
block
• 3 dB-bandwidth: DC to 2.4 GHz with
19 dB typical gain at 1.0 GHz
• Compression point
P
-1dB
= 12 dBm at 2.0 GHz
• Noise figure
F
50Ω
= 2.1 dB at 2.0 GHz
• Absolute stable
• 70 GHz
f
T
- Silicon Germanium technology
• 1 kV HBM ESD protection (Pin-to-Pin)
• Pb-free (RoHS compliant) package
3
4
1
2
SOT343
Applications
• Driver amplifier for GSM/PCS/CDMA/UMTS
• Broadband amplifier for SAT-TV & LNBs
• Broadband amplifier for CATV
Out, 3
IN, 1
GND, 2,4
Figure 1
Description
BGA614 is a broadband matched, general purpose MMIC amplifier in a Darlington configuration. It is optimized
for a typical supply current of 40 mA.
The BGA614 is based on Infineon Technologies’ B7HF Silicon Germanium technology.
Type
BGA614
Package
SOT343
Marking
BOs
Pin connection
Note:
ESD:
Electrostatic discharge sensitive device, observe handling precaution
Data Sheet
4
Rev. 2.1, 2011-09-02
BGA614
Electrical Characteristics
Maximum Ratings
Table 1
Parameter
Device voltage
Device current
Current into pin In
Input power
1)
Total power dissipation,
T
S
< 102 °C
2)
Junction temperature
Ambient temperature range
Storage temperature range
Maximum ratings
Symbol
Limit Value
3
80
0.7
10
240
150
-65... 150
-65... 150
1000
Unit
V
mA
mA
dBm
mW
°C
°C
°C
V
V
D
I
D
I
in
P
in
P
tot
T
J
T
A
T
STG
ESD capability all pins (HBM: JESD22-A114) V
ESD
1)Valid for
Z
S
=
Z
L
= 50
Ω,
V
CC
= 5 V,
R
Bias
= 62
Ω
2)
T
S
is measured on the ground lead at the soldering point
Note: All Voltages refer to GND-Node
Thermal resistance
Table 2
Parameter
Thermal resistance
Symbol
Value
Unit
K/W
Junction - soldering point
1)
R
thJS
200
1) For calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
Electrical Characteristics
Electrical characteristics at
T
A
= 25 °C (measured in test circuit specified in
Figure 2)
V
CC
= 5 V,
R
Bias
= 62
Ω,
Frequency = 2 GHz, unless otherwise specified
Table 3
Parameter
Insertion power gain
Electrical Characteristics
Symbol
Min.
Values
Typ.
19.8
19.0
17.5
Noise figure (
Z
S
= 50
Ω)
Max.
dB
dB
dB
dB
dB
dB
dBm
dBm
dB
dB
mA
Rev. 2.1, 2011-09-02
Unit
Note /
Test Condition
|S
21
|
2
F
50Ω
1.8
2.0
2.1
f
= 0.1 GHz
f
= 1.0 GHz
f
= 2.0 GHz
f
= 0.1 GHz
f
= 1.0 GHz
f
= 2.0 GHz
Output power at 1 dB gain
compression
Output third order intercept point
Input return loss
Output return loss
Total device current
Data Sheet
P
-1dB
OIP
3
RL
in
RL
out
I
D
5
12
25
18
20
40
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