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1N3600VE

Description
Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, DO-35
CategoryDiscrete semiconductor    diode   
File Size76KB,1 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet Parametric View All

1N3600VE Overview

Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, DO-35

1N3600VE Parametric

Parameter NameAttribute value
package instructionO-LALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak forward current4 A
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Maximum output current0.2 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
Maximum reverse current0.1 µA
Maximum reverse recovery time0.006 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
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