HA5340/883
June 1994
High Speed, Low Distortion, Precision Monolithic
Sample and Hold Amplifier
Description
The HA-5340/883 combines the advantages of two sample/hold
architectures to create a new generation of monolithic sample/
hold. High amplitude, high frequency signals can be sampled
with very low distortion being introduced. The combination of
exceptionally fast acquisition time and specified/characterized
hold mode distortion is an industry first. Additionally, the AC
performance is only minimally affected by additional hold
capacitance.
To achieve this level of performance, the benefits of an
integrating output stage have been combined with the
advantages of a buffered hold capacitor. To the user this
translates to a front-end stage that has high bandwidth due to
charging only a small capacitive load and an output stage with
constant pedestal error which can be nulled out using the offset
adjust pins. Since the performance penalty for additional hold
capacitance is low, the designer can further minimize pedestal
error and droop rate without sacrificing speed.
Low distortion, fast acquisition, and low droop rate are the
result, making the HA-5340/883 the obvious choice for high
speed, high accuracy sampling systems.
Features
• This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• Fast Acquisition Time (0.01%) . . . . . . . . . . . . . . . 900ns
• Fast Hold Mode Settling Time (0.01%) . . . . . . . . . 300ns
• Low Distortion (Hold Mode) . . . . . . . . . . . -72dBc (Typ)
(V
IN
= 200kHz, Fs = 450kHz, 5V
P-P
)
• Bandwidth Minimally Affected By External C
H
• Fully Differential Analog Inputs
• Built-in 135pF Hold Capacitor
• Pin Compatible with HA-5320
Applications
• High Bandwidth Precision Data Acquisition Systems
• Inertial Navigation and Guidance Systems
• Ultrasonics
• SONAR
• RADAR
Pinouts
HA-5340/883 (CERDIP)
TOP VIEW
Ordering Information
PART NUMBER
TEMPERATURE
RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
PACKAGE
14 Lead CerDIP
20 Lead Ceramic LCC
-INPUT 1
+INPUT 2
OFFSET ADJ 3
OFFSET ADJ 4
V- 5
SIG GND 6
OUTPUT 7
14 S/H CONTROL
13 SUPPLY GND
12 NC
11 EXTERNAL
HOLD CAP
10 NC
9 V+
8 NC
HA1-5340/883
HA4-5340/883
Functional Diagram
OFFSET
ADJUST
3
4
C
HOLD
EXTERNAL
(OPTIONAL)
11
7
HA-5340/883 (CLCC)
TOP VIEW
NC
S/H
CNTL
SUPPLY
GND
1
2
14
9
+V
5
-V
13
SUPPLY
GND
6
*
C
HOLD
120pF
-IN
+IN
C
COMP
15pF
7
OUT
+IN
3
OFFSET ADJ
NC
OFFSET ADJ
NC
4
5
6
7
-IN
2
1 20 19
18 NC
17 NC
16 EXT. HOLD CAP.
15 NC
14 NC
S/H
CONTROL
V- 8
9 10 11 12 13
SIG
GND
OUTPUT
NC
NC
V+
NOTE: Buffer acts as a buffer in sample mode, acts as a closed switch in hold
mode.
SIGNAL
GND
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
7-8
Spec Number
511117-883
File Number
2452.1
Specifications HA5340/883
Absolute Maximum Ratings
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 36V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V
Digital Input Voltage (S/H Pin) . . . . . . . . . . . . . . . . . . . . . . .+8V, -6V
Output Current, Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .±20mA
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Thermal Information
Thermal Resistance
θ
JA
θ
JC
CerDIP Package . . . . . . . . . . . . . . . . . 68
o
C/W
17
o
C/W
Ceramic LCC Package . . . . . . . . . . . . 68
o
C/W
18
o
C/W
Package Power Dissipation at +75
o
C
CerDip Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
Package Power Dissipation Derating Factor Above +75
o
C
CerDip Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mW/
o
C
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . 15mW/
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range . . . . . . . . . . . . -55
o
C
≤
T
A
≤
+125
o
C
Operating Supply Voltage (±V
S
)
. . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
Analog Input Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10V
Logic Level Low (V
IL
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 0.8V
Logic Level High (V
IH
) . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0V to 5.0V
TABLE 1. DC ELECTICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V+ = +15V; V- = -15V; V
IL
= 0.8V (Sample); V
IH
= 2.0V (Hold); C
H
= Internal = 135pF; Signal GND = Supply GND,
Unless Otherwise Specified.
GROUP A
SUBGROUP
1
2, 3
Input Bias Current
+I
B
1
2, 3
-I
B
1
2, 3
Input Offset Current
I
IO
1
2, 3
Open Loop Voltage Gain
+A
VS
R
L
= 2kΩ, C
L
= 60pF,
V
OUT
= +10V
R
L
= 2kΩ, C
L
= 60pF,
V
OUT
= -10V
V+ = 5V, V- = -25V,
V
OUT
= -10V, V
S/H
= -9.2V
V+ = 25V, V- = -5V,
V
OUT
= +10V, V
S/H
= 10.8V
V
OUT
= +10V
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
-I
O
V
OUT
= -10V
1
2, 3
Output Voltage Swing
+V
OP
R
L
= 2kΩ, C
L
= 60pF
1
2, 3
-V
OP
R
L
= 2kΩ, C
L
= 60pF
1
2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-1.5
-3
-350
-350
-350
-350
-350
-350
110
100
110
100
72
72
72
72
10
10
-10
-10
10
10
-
-
MAX
1.5
3
350
350
350
350
350
350
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-10
-10
UNITS
mV
mV
nA
nA
nA
nA
nA
nA
dB
dB
dB
dB
dB
dB
dB
dB
mA
mA
mA
mA
V
V
V
V
PARAMETERS
Input Offset Voltage
SYMBOL
V
IO
CONDITIONS
-A
VS
Common Mode
Rejection Ratio
+CMRR
-CMRR
Output Current
+I
O
CAUTION: These devices are sensitive to electronic discharge. Proper IC handling procedures should be followed.
Spec Number
511117-883
7-9
Specifications HA5340/883
TABLE 1. DC ELECTICAL PERFORMANCE CHARACTERISTICS
(Continued)
Device Tested at: V+ = +15V; V- = -15V; V
IL
= 0.8V (Sample); V
IH
= 2.0V (Hold); C
H
= Internal = 135pF; Signal GND = Supply GND,
Unless Otherwise Specified.
GROUP A
SUBGROUP
1
2, 3
-I
CC
V
OUT
= 0V, I
OUT
= 0mA
1
2, 3
Power Supply Rejection
Ratio
+PSRR
V+ = 13.5V, 16.5V
V- = -15V, -15V
V+ = +15V, +15V,
V- = -13.5V, -16.5V
V
IN
= 0V
1
2, 3
1
2, 3
1
2, 3
I
INH
V
IN
= 5V
1
2, 3
Digital Input Voltage
V
IL
1
2, 3
V
IH
1
2, 3
Output Voltage Droop
Rate
V
D
V
OUT
= 0V
2
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+125
o
C
MIN
-
-
-25
-25
75
75
75
75
-
-
-
-
-
-
2.0
2.0
-
MAX
25
25
-
-
-
-
-
-
40
40
40
40
0.8
0.8
-
-
95
UNITS
mA
mA
mA
mA
dB
dB
dB
dB
µA
µA
µA
µA
V
V
V
V
µV/µs
PARAMETERS
Power Supply Current
SYMBOL
+I
CC
CONDITIONS
V
OUT
= 0V, I
OUT
= 0mA
-PSRR
Digital Input Current
I
INL
TABLE 2. AC ELECTICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V+ = +15V; V- = -15V; V
IL
= 0.8V (Sample); V
IH
= 2.0V (Hold); C
H
= Internal = 135pF; - Input Tied to Output, Signal
GND = Supply GND, Unless Otherwise Specified.
GROUP A
SUBGROUP
4
4
5, 6
4
LIMITS
TEMPERATURE
+25
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
MIN
-50
-
-
-
MAX
50
50
50
50
UNITS
mV
ns
ns
ns
PARAMETERS
Hold Step Error
Rise Time & Fall Time
SYMBOL
V
ERROR
T
R
CONDITIONS
V
IL
= 0V, V
IH
= 4.0V,
t
RISE
(V
S/H
) = 15ns
C
L
=60pF, R
L
=2kΩ, A
V
= +1,
V
OUT
= 0V to +200mV Step
10%, 90%pts
C
L
= 60pF, R
L
= 2kΩ,
A
V
= +1, V
OUT
= 0V to
-200mV Step 10%, 90%pts
C
L
= 60pF, R
L
= 2kΩ,
A
V
= +1, V
OUT
= 0V to
+200mV Step
C
L
= 60pF, R
L
= 2kΩ,
A
V
= +1, V
OUT
= 0V
to -200mV Step
C
L
= 60pF, R
L
= 2kΩ,
A
V
= +1, V
OUT
= 0V to +10V
Step, 25%, 75% pts
C
L
= 60pF, R
L
= 2kΩ,
A
V
= +1, V
OUT
= 0V to -10V
Step, 25%, 75% pts
T
F
Overshoot
+OS
4
5, 6
4
5, 6
4
5, 6
4
5, 6
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
-
-
-
-
40
40
40
40
60
60
60
60
-
-
-
-
%
%
%
%
V/µs
V/µs
V/µs
V/µs
-OS
Slew Rate
+SR
-SR
CAUTION: These devices are sensitive to electronic discharge. Proper IC handling procedures should be followed.
Spec Number
511117-883
7-10
Specifications HA5340/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Hold Mode Feedthrough
Sample Mode Noise
Voltage
Hold Mode Noise
Voltage
Input Capacitance
Input Resistance
0.1% Acquisition Time
SYMBOL
V
HMF
E
n(SAMPLE)
CONDITIONS
V
IN
= 20V
P-P
, 200kHz
DC to 10MHz, V
S/H
= 0V,
R
LOAD
= 2K
DC to 10MHz, V
S/H
= 5V,
R
LOAD
= 2K
V
S/H
= 0V
V
S/H
= 0V, Delta V
IN
= 20V
C
L
= 60pF, R
L
= 2K, V
OUT
= 0V
to 10V Step
F
S
= 450kHz,
V
IN
= 20V
P-P
, 200kHz
F
S
= 450kHz,
V
IN
= 5V
P-P
, 500kHz
V
IN
= 20V
P-P
, 200kHz
V
IN
= 5V
P-P
, 500kHz
NOTES
1
1
TEMPERATURE
+25
o
C
+25
o
C
MIN
-
-
MAX
-70
335
UNITS
dB
µV
RMS
µV
RMS
E
n(HOLD)
1
+25
o
C
-
100
C
IN
R
IN
T
ACQ
0.1%
1
1
1
+25
o
C
+25
o
C
+25
o
C
-
1
-
5
-
600
pF
MΩ
ns
Total Harmonic
Distortion Hold Mode
THD
200K(HOLD)
1
+25
o
C
-
-50
dBc
THD
500K(HOLD)
1
+25
o
C
-
-47
dBc
Total Harmonic
Distortion Sample Mode
THD
200K(SAMPLE)
THD
500K(SAMPLE)
1
1
+25
o
C
+25
o
C
-
-
-60
-49
dBc
dBc
NOTE:
1. The parameters listed in this table are controlled via design or process parameters and are not directly tested. These parameters are
characterized upon initial design release and upon design changes which would affect these characteristics.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
Groups C and D Endpoints
NOTE:
1. PDA applies to Subgroup 1 only. No other subgroups are included in PDA.
SUBGROUPS (SEE TABLES 1 AND 2)
-
1(Note 1), 2, 3, 4, 5, 6
1, 2, 3, 4, 5, 6
1
CAUTION: These devices are sensitive to electronic discharge. Proper IC handling procedures should be followed.
Spec Number
511117-883
7-11
HA-5340/883
Die Characteristics
DIE DIMENSIONS:
84 x 139 x 19mils
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
Å
±
2k
Å
GLASSIVATION:
Type: Nitride (Si
3
N
4
) over Silox (SiO
2
, 5% Phos)
Silox Thickness: 12k
Å
±
2.0k
Å
Nitride Thickness: 3.5k
Å
±
1.5k
Å
DIE ATTACH:
Material: Gold Silicon Eutectic Alloy
Temperature:Ceramic DIP - 460
o
C (Max)
Ceramic LCC - 420
o
C (Max)
WORST CASE CURRENT DENSITY:
5.33 x 10
4
A/cm
2
Metallization Mask Layout
HA-5340/883
SUPPLY (13)
GND
S/H (14)
CONTROL
-IN (1)
(9) +V
SUPPLY
(7) OUTPUT
(7) OUTPUT
+IN (2)
(6) SIG GND
OFFSET ADJ (3)
OFFSET ADJ (4)
(11) EXTERNAL
HOLD CAP
-V
SUPPLY
(5)
Spec Number
7-12
511117-883
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