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1N4006GP-TP

Description
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size504KB,4 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
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1N4006GP-TP Overview

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2

1N4006GP-TP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeDO-41
package instructionROHS COMPLIANT, PLASTIC PACKAGE-2
Contacts2
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
Maximum reverse recovery time2 µs
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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1N4001GP
THRU
1N4007GP
1 Amp Glass
PassivatedRectifier
50 - 1000 Volts
DO-41
Features
Halogen
free available upon request by adding suffix "-HF"
Glass Passivated Junction
Low Current Leakage and Low Cost
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 20
°C/W
Junction To Lead
MCC
Catalog
Number
1N4001GP
1N4002GP
1N4003GP
1N4004GP
1N4005GP
1N4006GP
1N4007GP
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
1.0A
30A
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
T
A
= 75°C
8.3ms, half sine
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
D
1N4001GP
1N4002GP
1N4003GP
1N4004GP
1N4005GP
1N4006GP
1N4007GP
A
Cathode
Mark
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
Maximum Reverse
Recovery Time
Note:
I
F(AV)
I
FSM
C
V
F
1.1V
I
FM
= 1.0A;
T
J
= 25°C*
T
J
= 25°C
T
J
= 125°C
Measured at
1.0MHz, V
R
=4.0V
I
F
=0.5A, I
R
=1.0A,
I
rr
=0.25A
DIM
A
B
C
D
INCHES
MIN
.166
.080
.028
1.000
DIMENSIONS
MM
MIN
4.10
2.00
.70
25.40
I
R
5.0µA
50µA
15pF
2.0us
C
J
T
rr
MAX
.205
.107
.034
---
MAX
5.20
2.70
.90
---
NOTE
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
1.
High Temperature Solder Exemption Applied, see EU Directive Annex 7.
Revision: B
www.mccsemi.com
1 of 4
2013/01/01

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