an AMP company
CW Power Transistor,
30 - 400 MHz
Features
l
l
l
l
l
l
l
85W
PHOI 04-85
v2.00
NPN Silicon Power Transistor
Common Emitter Configuration
Class AB Broadband Operation
85 Watt PEP Output
Diffused Emitter Ballasting Resistors
Gold Metallization System
Proven in Thousands of ARC-182 Airborne Radios
.a20
:23.83)
c’
Absolute Maximum Ratings at 25°C
I
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
I Collector Current
) Symbol
1
Rating
( Units
1
V,,,
V
ES0
65
4.0
(
IO
194
200
-40 to +125
I
V
V
A
w
“C
“C
I
COATING
-,
(Peak)
I
lc
PO
TJ
Power Dissipation
JunctionTemperature
StorageTemperature
Thermal Resistance
I
T ST0
8.K I
0.9
I “WJv
I
LlNLiSS
3TH;RWISi
NJTEII,
TOLERANCES
ARE
(MILLIPIETERS
+,,3nH)
Electrical Characteristics
I Parameter
at 25°C
(
Symbol
1 Min
1 pax
1 Units I
lest Conditions
( Collector-Emitter Breakdown Voltage
I Base-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
DC Forward Current Gain
1 Input Power
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
1
1
BV,,,
BVm
‘CES
I 65 I
I
4.0 I
20
I
-
1
)
v
v
mA
-
W
dB
%
dB
I I,=10 mA, v,,=o.o v
I I,=IO mA, I,=O.OA
v,,=30 v
V-,=5.0 V, 1,=2.0 A
) V,,=27 V, I,,=50 mA, Pod85
W, F=400 MHZ
I
I
I
4
80
hcc
I
PIN I - I
GP
%
16
)
-
-
-
7.3
45
9
-
I
V,,=27 V, I,,=50 mA, PO,,,=85W. F=400 MHz
V,,=27 V, I,,=50 mA, Pob,=85 W, F=400 MHz
!I,,=27 V, I,,=50 mA, P,~85
) V,,=27V,
1,,=5omA, ~~~85
W, F=400 MHz
w, F=~OOMHZ
RL
I
VBWH-T I
3:l
I
-
Specifications
Subjectto ChangeWithoutNotice.
9-86
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
n
MIA-COM, Inc.
Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
Europe:
Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
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