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MBRF60030R

Description
Schottky Diodes & Rectifiers Schottky Rectifier - 30 V - 600 A - TO-244AB
Categorysemiconductor    Discrete semiconductor   
File Size624KB,3 Pages
ManufacturerGeneSiC Semiconductor
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MBRF60030R Overview

Schottky Diodes & Rectifiers Schottky Rectifier - 30 V - 600 A - TO-244AB

MBRF60030R Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerGeneSiC Semiconductor
Product CategorySchottky Diodes & Rectifiers
ProductSchottky Diodes
Mounting StyleScrew Mount
Package / CaseTO-244AB
If - Forward Current600 A
Vrrm - Repetitive Reverse Voltage30 V
Vf - Forward Voltage0.75 V
Ifsm - Forward Surge Current4000 A
TechnologySi
Ir - Reverse Current1 uA
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 175 C
Operating Temperature Range- 40 C to + 175 C
MBRF60020 thru MBRF60045R
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types up to 45 V V
RRM
TO-244AB Package
V
RRM
= 20 V - 45 V
I
F
= 600 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak
reverse voltage
RMS reverse
voltage
DC blocking
voltage
Continuous
forward current
Surge non-
repetitive forward
current, Half Sine
Wave
Operating
temperature
Storage
temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
T
C
130 °C
T
C
= 25 °C, t
p
= 8.3
ms
Conditions
MBRF60020 (R) MBRF60030 (R) MBRF60035 (R) MBRF60040 (R) MBRF60045 (R) Unit
20
14
20
600
30
21
30
600
35
25
35
600
40
28
40
600
45
32
45
600
V
V
V
A
I
F,SM
4000
4000
4000
4000
4000
A
T
j
T
stg
-40 to 175
-40 to 175
-40 to 175
-40 to 175
-40 to 175
-40 to 175
-40 to 175
-40 to 175
-40 to 175
-40 to 175
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward
voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 300 A, T
j
= 25 °C
V
R
= 20 V, T
j
= 25 °C
V
R
= 20 V, T
j
= 125 °C
MBRF60020 (R) MBRF60030 (R) MBRF60035 (R) MBRF60040 (R) MBRF60045 (R) Unit
0.65
10
200
0.65
10
200
0.65
10
200
0.65
10
200
0.65
10
200
V
mA
Thermal characteristics
Thermal
resistance,
junction - case
R
thJC
0.28
0.28
0.28
0.28
0.28
°C/W
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