VUO22-08NO1
Standard Rectifier Module
3~
Rectifier
V
RRM
=
I
DAV
=
I
FSM
=
800
30
150
3~ Rectifier Bridge
Part number
VUO22-08NO1
Backside: isolated
4/5
6 8 10
1/2
Features / Advantages:
●
Package with DCB ceramic
●
Improved temperature and power cycling
●
Planar passivated chips
●
Very low forward voltage drop
●
Very low leakage current
Applications:
●
Diode for main rectification
●
For three phase bridge configurations
●
Supplies for DC power equipment
●
Input rectifiers for PWM inverter
●
Battery DC power supplies
●
Field supply for DC motors
Package:
V1-A-Pack
●
Isolation Voltage: 3600 V~
●
Industry standard outline
●
RoHS compliant
●
Soldering pins for PCB mounting
●
Height: 17 mm
●
Base plate: DCB ceramic
●
Reduced weight
●
Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20151102c
© 2015 IXYS all rights reserved
VUO22-08NO1
Rectifier
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 150 °C
d=
⅓
T
VJ
= 150 °C
0,84
28
0,4
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
4
50
150
160
130
140
115
105
85
82
V
mΩ
K/W
W
A
A
A
A
A²s
A²s
A²s
A²s
pF
min.
typ.
max. non-repetitive reverse blocking voltage
max. Unit
900
V
800
10
0,7
1,19
1,59
1,13
1,66
30
V
µA
mA
V
V
V
V
A
V
R
= 800 V
V
R
= 800 V
I
F
=
I
F
=
I
F
=
I
F
=
10 A
30 A
10 A
30 A
forward voltage drop
I
DAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
bridge output current
T
C
= 110 °C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
2,5 K/W
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
C
J
junction capacitance
V
R
= 400 V; f = 1 MHz
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20151102c
© 2015 IXYS all rights reserved
VUO22-08NO1
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting torque
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
V1-A-Pack
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
100
150
125
125
Unit
A
°C
°C
°C
g
Nm
mm
mm
V
V
37
2
6,0
12,0
3600
3000
2,5
Date Code
Prod. Index
yywwA
Part Number (Typ)
Lot No.:
Data Matrix:
Typ
(1-19), DC+Prod.Index (20-25),
FKT#
(26-31)
leer
(33),
lfd.#
(33-36)
Ordering
Standard
Ordering Number
VUO22-08NO1
Marking on Product
VUO22-08NO1
Delivery Mode
Blister
Quantity
24
Code No.
461075
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Rectifier
* on die level
T
VJ
= 150 °C
V
0 max
R
0 max
0,84
27
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20151102c
© 2015 IXYS all rights reserved
VUO22-08NO1
Outlines V1-A-Pack
0,5
+0,2
R2
17
±0,25
max. 0,25
35
63
13
26
31,6
52 (see 1)
=
1x45°
*14
*11
1
=
11,75
±0,3
Ø 6,1
12,2
5,5
11,75
±0,3
1,5
Ø 2,5
*7
*0
*7 *14
4
2
3
5
4
*0
6
7
8
15
Ø 2,1
9
5,5
*11
6
0,5
*14
25
25,75
±0,3
*0
*14
25
*
25,75
±0,3
Ø 0,8
Marking on product
Aufdruck der Typenbezeichnung
10
1
±0,2
Remarks /
Bemerkungen:
1. Nominal distance mounting screws on heat sink: 52 mm /
Nennabstand Befestigungsschrauben auf Kühlkörper: 52 mm
2. General tolerance /
Allgemeintoleranz
: DIN ISO 2768 -T1-c
3. Surface treatment of pins: tin plated (Sn) in hot dip /
Oberflächenbehandlung der Pins: verzinnt (Sn) im Tauchbad
2
+0,2
4/5
6 8 10
1/2
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20151102c
© 2015 IXYS all rights reserved
6
2
3,6
±0,5
VUO22-08NO1
Rectifier
30
130
120
110
20
80
100
50 Hz
0.8 x V
RRM
120
V
R
= 0 V
100
I
F
[A]
10
T
VJ
=
125°C
150°C
T
VJ
= 25°C
I
2
t
T
VJ
= 45°C
T
VJ
= 150°C
I
FSM
[A]
60
40
20
0
1
T
VJ
= 45°C
T
VJ
= 150°C
90
80
70
60
10
-3
[A s]
2
0
0.4
0.8
1.2
1.6
2.0
10
-2
10
-1
10
0
10
V
F
[V]
Fig. 1 Forward current vs.
voltage drop per diode
t [s]
Fig. 2 Surge overload current
vs. time per diode
t [ms]
Fig. 3 I
2
t vs. time per diode
16
DC =
1
0.5
0.4
0.33
0.17
0.08
R
thJA
:
0.6 KW
0.8 KW
1
2
4
8
KW
KW
KW
KW
36
32
28
24
DC =
1
0.5
0.4
0.33
0.17
0.08
12
P
tot
[W]
I
F(AV)M
20
[A]
16
12
8
4
8
4
0
0
2
4
6
8
10
12
0
25
50
75
100
125
150
175
0
0
25
50
75
100 125 150
I
F(AV)M
[A]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
T
A
[°C]
T
C
[°C]
Fig. 5 Max. forward current vs.
case temperature per diode
3.0
2.5
2.0
Z
thJC
1.5
Constants for Z
thJC
calculation:
i
1
2
3
4
1
10
100
1000
10000
[K/W]
1.0
0.5
0.0
R
th
(K/W)
1.300
0.300
0.350
0.550
t
i
(s)
0.1015
0.1026
0.4919
0.6200
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20151102c
© 2015 IXYS all rights reserved
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