ZXT13N15DE6
15V NPN LOW SATURATION SWITCHING TRANSISTOR
Features
BV
CEO
> 15V
I
C
= 5A Continuous Collector Current
I
CM
= 15A Peak Pulse Current
R
CE(SAT)
= 29mΩ for a Low Equivalent On-Resistance
Very Low Saturation Voltage (70mV max @ 1A)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-
STD-202, Method 208
Weight: 0.015 grams (Approximate)
ADVANCE INFORMATION
Applications
SOT26
DC–DC Converters
Power Management Functions
Power Switches
Motor Control
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Note 4)
Product
ZXT13N15DE6TA
Notes:
Compliance
AEC-Q101
Marking
N15D
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT26
N15D = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
Date Code Key
Year
2015
Code
C
Month
Code
Jan
1
2016
D
Feb
2
2017
E
Mar
3
2018
F
Apr
4
2019
G
May
5
2020
H
Jun
6
2021
I
Jul
7
Aug
8
2022
J
Sep
9
2023
K
Oct
O
2024
L
Nov
N
2025
M
Dec
D
ZXT13N15DE6
Document Number: DS33634 Rev. 2 - 2
1 of 7
www.diodes.com
October 2015
© Diodes Incorporated
ZXT13N15DE6
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Continuous Collector Current
Peak Pulse Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
B
I
C
I
CM
Value
40
15
7.5
500
5
15
Unit
V
V
V
mA
A
A
ADVANCE INFORMATION
Thermal Characteristics
Characteristic
Power Dissipation
Linear Derating Factor
(Note 5)
P
D
(Note 6)
(Note 5)
(Note 6)
(Note 7)
R
θJA
R
θJL
T
J
, T
STG
Symbol
Value
1.1
8.8
1.7
13.6
113
73
18.6
-55 to +150
°C
Unit
W
mW/°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
°C/W
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the collector lead on 25mm x 25mm 1oz copper that is on single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as Note 6, except the device is measured at t
5 sec.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXT13N15DE6
Document Number: DS33634 Rev. 2 - 2
2 of 7
www.diodes.com
October 2015
© Diodes Incorporated
ZXT13N15DE6
Thermal Characteristics and Derating Information
ADVANCE INFORMATION
ZXT13N15DE6
Document Number: DS33634 Rev. 2 - 2
3 of 7
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October 2015
© Diodes Incorporated
ZXT13N15DE6
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter Cutoff Current
Collector-Emitter Cutoff Current
ON CHARACTERISTICS
(Note 9)
250
DC Current Gain
h
FE
300
200
20
—
Collector-Emitter Saturation Voltage
V
CE(sat)
—
—
—
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Turn-Off Time
Note:
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
CES
Min
40
15
7.5
—
—
—
Typ
85
22
8.5
—
—
—
400
450
300
50
5
45
130
145
—
—
72
76
92
340
Max
—
—
—
100
100
100
—
900
—
—
8
70
190
200
1
0.9
—
—
—
—
V
V
MHz
pF
ns
ns
mV
—
Unit
V
V
V
nA
nA
nA
I
C
= 100µA
I
C
= 10mA
I
E
= 100µA
V
CB
= 32V
V
EB
= 6V
V
CES
= 32V
I
C
= 10mA, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 5A, V
CE
= 2V
I
C
= 15A, V
CE
= 2V
I
C
= 100mA, I
B
= 10mA
I
C
= 1A, I
B
= 10mA
I
C
= 4A, I
B
= 40mA
I
C
= 5A, I
B
= 100mA
I
C
= 5A, I
B
= 100mA
I
C
= 5A, V
CE
= 2V
V
CE
= 10V, I
C
= 50mA, f = 50MHz
V
CB
= 10V, f = 1MHz
V
CC
= 10V, I
C
= 3A
I
B1
= I
B2
= 60mA
Test Condition
ADVANCE INFORMATION
V
BE(sat)
V
BE(on)
f
T
C
obo
t
(on)
t
(off)
—
—
—
—
—
—
9. Measured under pulsed conditions. Pulse width
300μs. Duty cycle
2%.
ZXT13N15DE6
Document Number: DS33634 Rev. 2 - 2
4 of 7
www.diodes.com
October 2015
© Diodes Incorporated
ZXT13N15DE6
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
ADVANCE INFORMATION
ZXT13N15DE6
Document Number: DS33634 Rev. 2 - 2
5 of 7
www.diodes.com
October 2015
© Diodes Incorporated
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