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BYT51B-TR

Description
Rectifiers 1.5 Amp 100 Volt 50 Amp IFSM
CategoryDiscrete semiconductor    diode   
File Size118KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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BYT51B-TR Overview

Rectifiers 1.5 Amp 100 Volt 50 Amp IFSM

BYT51B-TR Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
package instructionHALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time12 weeks
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeE-LALF-W2
JESD-609 codee2
Humidity sensitivity level1
Maximum non-repetitive peak forward current50 A
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
Peak Reflow Temperature (Celsius)260
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time4 µs
surface mountNO
technologyAVALANCHE
Terminal surfaceTin/Silver (Sn96.5Ag3.5)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperature30
BYT51A, BYT51B, BYT51D, BYT51G, BYT51J, BYT51K, BYT51M
www.vishay.com
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
949539
MECHANICAL DATA
Case:
SOD-57
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 369 mg
APPLICATIONS
• Rectification diode
ORDERING INFORMATION
(Example)
DEVICE NAME
BYT51M
BYT51M
ORDERING CODE
BYT51M-TR
BYT51M-TAP
TAPED UNITS
5000 per 10" tape and reel
5000 per ammopack
MINIMUM ORDER QUANTITY
25 000
25 000
PARTS TABLE
PART
BYT51A
BYT51B
BYT51D
BYT51G
BYT51J
BYT51K
BYT51M
TYPE DIFFERENTIATION
V
R
= 50 V; I
F(AV)
= 1.5 A
V
R
= 100 V; I
F(AV)
= 1.5 A
V
R
= 200 V; I
F(AV)
= 1.5 A
V
R
= 400 V; I
F(AV)
= 1.5 A
V
R
= 600 V; I
F(AV)
= 1.5 A
V
R
= 800 V; I
F(AV)
= 1.5 A
V
R
= 1000 V; I
F(AV)
= 1.5 A
PACKAGE
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BYT51A
BYT51B
Reverse voltage
= repetitive peak reverse voltage
BYT51D
See electrical characteristics
BYT51G
BYT51J
BYT51K
BYT51M
Peak forward surge current
Repetitive peak forward current
Average forward current
Junction and storage temperature range
Non repetitive reverse avalanche energy
l
(BR)R
= 1 A
l = 10 mm
On PC board
t
p
= 10 ms, half sine wave
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FRM
I
F(AV)
I
F(AV)
T
j
= T
stg
E
R
VALUE
50
100
200
400
600
800
1000
50
9
1.5
1
-55 to +175
20
UNIT
V
V
V
V
V
V
V
A
A
A
A
°C
mJ
Rev. 2.0, 04-Nov-15
Document Number: 86028
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

BYT51B-TR Related Products

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Description Rectifiers 1.5 Amp 100 Volt 50 Amp IFSM Rectifiers 1.5 Amp 200 Volt 50 Amp IFSM Rectifiers 1.5 Amp 800 Volt 50 Amp IFSM Rectifiers 1.5 Amp 400 Volt 50 Amp IFSM Rectifiers 1.5 Amp 50 Volt 50 Amp IFSM
Is it lead-free? Lead free Lead free Lead free Lead free Lead free
Maker Vishay Vishay Vishay Vishay Vishay
package instruction HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2
Reach Compliance Code not_compliant not_compliant unknown not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V 1 V
JESD-30 code E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2
JESD-609 code e2 e2 e2 e2 e2
Humidity sensitivity level 1 1 1 1 1
Maximum non-repetitive peak forward current 50 A 50 A 50 A 50 A 50 A
Number of components 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A
Package body material GLASS GLASS GLASS GLASS GLASS
Package shape ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) 260 260 NOT SPECIFIED 260 260
Maximum repetitive peak reverse voltage 100 V 200 V 800 V 400 V 50 V
Maximum reverse recovery time 4 µs 4 µs 4 µs 4 µs 4 µs
surface mount NO NO NO NO NO
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal surface Tin/Silver (Sn96.5Ag3.5) Tin/Silver (Sn96.5Ag3.5) Tin/Silver (Sn/Ag) Tin/Silver (Sn96.5Ag3.5) Tin/Silver (Sn96.5Ag3.5)
Terminal form WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature 30 30 NOT SPECIFIED 30 30
Is it Rohs certified? conform to conform to - conform to conform to
Factory Lead Time 12 weeks 12 weeks - 12 weeks 12 weeks
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