MCH6660
Power MOSFET
Features
•
20V, 136m
Ω
, 2A, –20V, 266m
Ω
, –1.5A Complementary Dual
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•
•
•
ON-resistance Nch : RDS(on)1=105m
Ω
(typ.)
Pch : RDS(on)1=205m
Ω
(typ.)
Pb-Free, Halogen Free and RoHS Compliance
Ultrasmall Package MCPH6(2.0mm
×
2.1mm
×0.85
mmt)
Nch MOSFET and Pch MOSFET are put in MCPH6 Package
•
•
1.8V Drive
ESD Diode - Protected Gate
Applications
•
General-Purpose Switching Device Applications
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tj
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
×0.8mm)
1unit
2
Conditions
N-channel
20
±10
2
8
0.8
150
P-channel
-
-20
±10
--1.5
--6
Unit
V
V
A
A
W
°C
°C
--55 to +150
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
7022A-006
2.0
0.25
6
5
4
0 to 0.02
0.15
Product & Package Information
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
MCH6660-TL-H
MCH6660-TL-W
Packing Type : TL
Marking
LOT No.
LOT No.
2.1
1.6
XM
0.25
1
0.65
2
3
0.3
TL
0.85
Electrical Connection
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
MCPH6
1
2
3
6
5
4
0.07
1
2
3
6
5
4
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of this data sheet.
©Semiconductor Components Industries, LLC, 2014
December 2014 - Rev. 2
1
Publication Order Nunber:
MCH6660/D
MCH6660
Electrical Characteristics
at Ta=25°C
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Forward Diode Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Forward Diode Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=--1.5A, VGS=0V
VDS=-
-10V, VGS=-
-4.5V, ID=--1.5A
See specified Test Circuit.
VDS=--10V, f=1MHz
ID=-
-1mA, VGS=0V
VDS=-
-20V, VGS=0V
VGS=±8V, VDS=0V
VDS=-
-10V, ID=-
-1mA
VDS=-
-10V, ID=-
-750mA
ID=-
-750mA, VGS=-
-4.5V
ID=-
-300mA, VGS=-
-2.5V
ID=-
-100mA, VGS=-
-1.8V
--0.4
1.9
205
295
430
120
26
20
5.3
9.7
16
14
1.7
0.28
0.47
-
-0.89
--1.2
266
413
645
-
-20
--1
±10
--1.4
V
μA
μA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
mΩ
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=2A, VGS=0V
VDS=10V, VGS=4.5V, ID=2A
See specified Test Circuit.
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=4.5V
ID=0.5A, VGS=2.5V
ID=0.3A, VGS=1.8V
VDS=10V, f=1MHz
0.4
1.9
105
147
212
128
28
21
5.1
11
14.5
12
1.8
0.3
0.55
0.85
1.2
136
205
318
20
1
±10
1.3
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Symbol
Conditions
Value
min
typ
max
Unit
mΩ
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate (900mm
2
×0.8mm)
1unit
Symbol
R
θJA
Value
156.3
Unit
°C/W
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2
MCH6660
Switching Time Test Circuit
[N-channel]
4.5V
0V
VIN
VDD=10V
[P-channel]
0V
--4.5V
VIN
VDD= --10V
VIN
PW=10μs
D.C.≤1%
G
D
ID=1A
RL=10Ω
VOUT
PW=10μs
D.C.≤1%
VIN
D
ID= --750mA
RL=13.3Ω
VOUT
G
P.G
MCH6660
50Ω
S
P.G
MCH6660
50Ω
S
2.0
ID -- VDS
6.0V
4.5V
[Nch]
Ta=25°C
2.5
ID -- VGS
VDS=10V
[Nch]
2.5V
1.8
V
Drain Current, I
D -- A
1.5V
1.0
Drain Current, I
D -- A
1.5
8.0V
2.0
1.5
1.0
0.5
Ta
=
0
0.2
0.4
0.6
0.8
1.0
1.2
0.5
VGS=1.2V
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
25
°
1.4
1.6
C
--25
°
C
75
°
C
1.8
2.0
Drain-to-Source Voltage, VDS -- V
400
RDS(on) -- VGS
IT16372
[Nch]
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Gate-to-Source Voltage, VGS -- V
400
350
300
250
200
150
100
50
0
--60
RDS(on) -- Ta
IT16373
[Nch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
350
300
250
200
150
100
50
0
I
D
=0.3A
0.5A
1A
0.3A
, I
D
=
V
=1.8
VGS
.5A
I
=0
.5V
,
D
=2
VGS
0A
I
=1.
4.5V, D
V GS=
0
1
2
3
4
5
6
7
8
9
10
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT16645
Ambient Temperature, Ta --
°
C
IT16646
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3
MCH6660
10
7
gFS
-- ID
[Nch]
VDS=10V
Forward Transconductance,
gFS
-- S
5
10
7
5
3
2
IS -- VSD
[Nch]
VGS=0V
2
1.0
7
5
3
2
0.1
0.01
5
°
C
--2
=
C
Ta
75
°
°
C
25
Source Current, I
S -- A
3
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0
0.2
2
3
5 7 0.1
2
3
Drain Current, I
D -- A
5 7 1.0
2
3
1000
7
5
SW Time -- ID
5 7 10
IT16376
0.001
Ta=
7
5
°
C
25
°
C
--25
°
C
0.4
0.6
0.8
1.0
1.2
IT16377
[Nch]
VDD=10V
VGS=4.5V
Ciss, Coss, Crss -- pF
1000
7
5
3
2
Ciss, Coss, Crss -- VDS
Forward Diode Voltage, VSD -- V
[Nch]
f=1MHz
Switching Time, SW Time -- ns
3
2
100
7
5
3
2
10
7
5
3
2
1.0
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
IT16644
Ciss
100
7
5
3
2
10
tf
td(off)
td(on)
tr
Coss
Crss
0
2
4
6
8
10
12
14
16
18
20
Drain Current, I
D -- A
4.5
4.0
3.5
VGS -- Qg
[Nch]
Drain-to-Source Voltage, VDS -- V
10
7
5
3
2
SOA
IT16379
[Nch]
Gate-to-Source Voltage, VGS -- V
VDS=10V
I
D=2A
Drain Current, I
D -- A
I
DP=8A (PW
≤
10
μs)
I
D=2A
10
ms
10
0
μ
s
1m
s
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1.0
7
5
3
2
0.1
7
5
3
2
DC
10
op
0m
era
tio
s
n
Operation in this
area is limited by RDS(on).
0.01
0.1
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm
2
×0.8mm)
1unit
2
3
5 7 1.0
2
3
5 7 10
2
3
Total Gate Charge,
Qg --
nC
--2.0
ID -- VDS
V
IT16380
[Pch]
Drain-to-Source Voltage, VDS -- V
--2.0
--1.8
--1.6
ID -- VGS
5 7 100
IT16647
[Pch]
V
--4.
5V
-
-3
.5
--1.6
--2
.5V
--1
--1.8
--8.0
.8
V
VDS= --10V
Drain Current, I
D -- A
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
--0.1 --0.2
Drain Current, I
D -- A
--1.5
V
--1.4
--1.2
--1.0
--0.8
25
°
C
0
--0.5
--1.0
--0.4
--0.2
--0.3 --0.4 --0.5 --0.6
--0.7 --0.8
--0.9 --1.0
IT14614
0
--2
5
--1.5
°
C
Ta=
7
VGS= --1.0V
--0.6
5
°
C
--2.0
--2.5
--3.0
IT14615
Drain-to-Source Voltage, VDS -- V
Gate-to-Source Voltage, VGS -- V
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4
MCH6660
700
RDS(on) -- VGS
[Pch]
Ta=25
°
C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
700
600
500
400
300
200
100
0
--60
RDS(on) -- Ta
[Pch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
600
I
D=
--0.1A
500
400
300
200
100
0
--0.3A
--0.75A
=
VGS
= --0
V
, I
D
--1.8
.1A
.3A
5A
=
V GS
= -
-0
5V
, I
D
--2.
.7
I
= --0
--4.5V
,
D
V GS=
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
5
gFS
-- ID
IT16648
5
3
2
Ambient Temperature, Ta --
°
C
[Pch]
VDS= --10V
IS -- VSD
IT16649
[Pch]
VGS=0V
Forward Transconductance,
gFS
-- S
3
2
1.0
7
5
3
2
C
5
°
--2
=
C
Ta
75
°
Source Current, I
S -- A
°
C
25
--1.0
7
5
3
2
3
0.1
7
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
2
--0.01
0
--0.2
--0.4
--0.6
25
°
C
--25
°
C
--0.8
Ta=
7
--0.1
7
5
5
°
C
--1.0
--1.2
HD14619
Drain Current, I
D -- A
5
3
SW Time -- ID
HD14618
[Pch]
VDD= --10V
VGS= --4.5V
Ciss, Coss, Crss -- pF
3
2
Ciss, Coss, Crss -- VDS
Forward Diode Voltage, VSD -- V
[Pch]
f=1MHz
Switching Time, SW Time -- ns
2
td (off)
Ciss
100
10
7
5
3
2
tf
tr
7
5
3
2
td(on)
Coss
Crss
10
--0.1
2
3
5
7
--1.0
2
3
7
0
--2
--4
--6
--8
--10
--12
--14
--16
--18
--20
Drain Current, I
D -- A
--4.5
--4.0
--3.5
VGS -- Qg
HD141104
[Pch]
Drain-to-Source Voltage, VDS -- V
--10
7
5
3
2
SOA
IT14621
[Pch]
Gate-to-Source Voltage, VGS -- V
VDS= --10V
I
D= --1.5A
Drain Current, I
D -- A
I
DP= --6A (PW≤10μs)
10
DC
1m
ms
I
D= --1.5A
s
10
0
μ
s
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
--1.0
7
5
3
2
--0.1
7
5
3
2
10
op
er
0m
s
on
Operation in
this area is
limited by RDS(on).
ati
Total Gate Charge,
Qg --
nC
--0.01
--0.1
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm
2
×0.8mm)
1unit
2
3
IT14622
Drain-to-Source Voltage, VDS -- V
5 7 --1.0
2
3
5 7 --10
2
3
5 7 --100
HD16650
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