TS110-7
High surge voltage 1.25 A SCR for circuit breaker
Datasheet
-
production data
Features
•
On-state rms current, 1.25 A
•
Repetitive peak off-state voltage, 700 V
A
•
Non-repetitive direct surge peak off-state
voltage, 1250 V
•
Non-repetitive reverse surge peak off-state
voltage, 850 V
G
K
K
G
A
•
Triggering gate current, 100 µA
Description
Thanks to highly sensitive triggering levels, the
TS110-7 series is suitable for circuit breaker
applications where the available gate current is
limited. Such applications include GFCI (ground
fault circuit interrupter), AFCI (arc fault circuit
interrupter), RCD (residual current device), and
RCBO (residual current circuit breaker with
overload protection).
The 1250 V surge voltage capability of the
TS110-7 enables high robustness of the whole
circuit breaker. The low leakage current of the
TS110-7 reduces power consumption over the
entire lifetime of the circuit breaker.
The TS110-7 is available in through-hole TO-92
package with GAK pinout and in SMBflat-3L.
SMBflat-3L
TS110-7UF
K
G
A
TO-92 with “GAK” pinout
TS110-7A1
June 2014
This is information on a product in full production.
DocID022271 Rev 4
1/10
www.st.com
Characteristics
TS110-7
1
Characteristics
Table 1. Absolute ratings (limiting values)
Symbol
I
T(RMS)
Parameter
TO-92
On-state rms current (180° conduction angle)
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state current
TO-92
T
l
= 58 °C
Value
1.25
Unit
A
SMBflat-3L T
tab
= 110 °C
T
l
= 58 °C
0.8
27
25
T
j initial
= 25 °C
25 times 12 A,
25 times 16 A
3.1
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
t
p
= 50 µs
t
p
= 50 µs
t
p
= 20 µs
T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
100
A/µs
100
700
1250
850
1.2
0.2
- 40 to + 150
°C
Operating junction temperature range
- 40 to + 125
V
V
V
A
W
A
2
S
A
A
IT
(AV)
SMBflat-3L T
tab
= 110 °C
t
p
= 8.3 ms
t
p
= 10 ms
I
TSM
1st step: one surge every 5 seconds, 25 surges
t = 10 ms
2nd step: one surge every 5 seconds, 25 surges
p
I
²
t
I
²
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤
100 ns
Critical rate of rise of on-state current
Gate open, V
D
= V
BO
, t
r
≤
100 ns
V
DRM
,
V
RRM
V
DSM
V
RSM
I
GM
P
G(AV)
T
stg
T
j
Repetitive peak off-state voltage, gate open
Non-repetitive direct surge peak off-state
voltage, R
GK
= 220
Ω
Non-repetitive reverse surge peak off-state
voltage, R
GK
= 220
Ω
Peak gate current
Average gate power dissipation
Storage junction temperature range
t
p
= 10 ms
F = 60 Hz
dI/dt
Table 2. Electrical characteristics
Symbol
I
GT
V
GT
V
GD
V
RG
I
H
I
L
dV/dt
V
D
= V
DRM
, R
L
= 33 kΩ, R
GK
= 220
Ω
I
RG
= 2 mA
I
T
= 50 mA, R
GK
= 220
Ω
I
G
= 5 mA, R
GK
= 220
Ω
V
D
= 67% V
DRM,
R
GK
= 220
Ω
T
j
= 125 °C
T
j
= 25 °C
T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
Test conditions
Min.
V
D
= 12 V, R
L
= 140Ω
T
j
= 25 °C
Max.
Max.
Min.
Min.
Max.
Max.
Min.
Value
1
µA
100
0.8
0.1
7.5
2
2
15
V
V
V
mA
mA
V/µs
Unit
2/10
DocID022271 Rev 4
TS110-7
Table 3. Static electrical characteristics
Symbol
V
TM
V
T0
R
D
I
DRM
I
RRM
I
TM
= 2.5 A, t
p
= 380 µs
Threshold voltage
Dynamic resistance
V
D
= V
DRM
/ V
RRM
, R
GK
= 220
Ω
Test conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
Max.
Max.
Max.
Max.
Characteristics
Value
1.4
0.9
200
1
100
Unit
V
V
mΩ
µA
µA
Table 4. Thermal resistance
Symbol
R
th(j-l)
R
th(j-a)
R
th(j-c)
Junction to leads (DC)
Junction to ambient (DC)
SMBflat-3L
Junction to case (DC)
S = 5 cm
2
SMBflat-3L
75
14
Parameter
TO-92
TO-92
Value
65
160
°C/W
Unit
Figure 1. Maximum average power dissipation
versus average on-state current
1.2
Figure 2. Average and DC on-state current
versus lead temperature (TO-92)
I
T(AV)
(A)
1.4
P(W)
α
= 30°, 60°, 90°, 120°, 180°, DC
1.0
α
= 30°, 60°, 90°, 120°, 180°, DC
1.2
1.0
0.8
0.8
0.6
0.6
0.4
0.4
360°
0.2
0.2
I
T(AV)
(A)
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
α
0.0
0.9
1.0
T
lead
(°C)
0
25
50
75
100
125
Figure 3. Average and DC on-state current
versus lead temperature (SMBflat-3L)
1.4
1.2
Figure 4. Average and DC on-state current
versus ambient temperature
I
T(AV)
(A)
1.2
1.0
SMBF-3L
DC
I
T(AV)
(A)
α
= 30°, 60°, 90°, 120°, 180°, DC
SMBF-3L
180-
TO-92
1.0
0.8
0.8
0.6
0.4
0.2
0.6
TO-92
DC
0.4
0.2
180-
T
lead
(°C)
0.0
0
25
50
75
100
125
0.0
0
25
50
T
amb
(°C)
75
100
125
DocID022271 Rev 4
3/10
10
Characteristics
TS110-7
Figure 5. Relative variation of thermal
impedance junction to ambient versus pulse
duration
1.00
Figure 6. Relative variation of gate triggering
current and voltage, holding and latching
current versus T
j
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
K=[Z
th(j-a)
/R
th(j-a)
]
TO-92
I
GT
, I
H
, I
L
, V
GT
[T
j
] / I
GT
, I
H
, I
L
, V
GT
[T
j
=25°C]
I
GT
SMBflat-3L
Copper surface
area = 5cm²
I
H
& I
L
0.10
V
GT
t
p
(s)
0.01
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
T
j
(°C)
-40
-20
0
20
40
60
80
100
120
Figure 7. Relative variation of holding current
Figure 8. Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values) versus gate-cathode resistance (typical values)
1.5
I
H
[R
GK
] / I
H
[R
GK
= 220
Ω
]
10.00
dV/dt[R
GK
] / dV/dt[R
GK
= 220
W
]
T
j
= 125°C
V
D
= 0.67 x V
DRM
1.0
1.00
0.5
0.10
R
GK
(k
Ω
)
0.0
0.1
0.01
R
GK
(
W
)
10.0
0
200
400
600
800
1.0
Figure 9. Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical
values)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20
40
60
80
100
120
140
160
180
200
220
Figure 10. Relative variation of dV/dt immunity
versus junction temperature with R
GK
= 220
Ω
(typical values)
10
9
8
7
6
5
4
3
2
dV/dt[C
GK
] / dV/dt[C
GK
= 100 nF]
Typical value of dV/dt[CGK = 100 nF] = 25 V/µs
T
j
= 125°C
V
D
= 0.67 x V
DRM
dV/dt[
T
j
] / dV/dt[
T
j
= 125 °C]
R
GK
= 220
Ω
V
D
= 0.67 x V
DRM
C
GK
(nF)
1
0
20
40
60
T
j
(°C)
80
100
120
4/10
DocID022271 Rev 4
TS110-7
Characteristics
Figure 11. Surge peak on-state current versus
number of cycles
26
24
22
20
18
16
14
12
10
8
6
4
2
0
1
10
100
1000
TO-92
Repetitive
T
A
=25 °C
Figure 12. Non-repetitive surge peak on-state
current, and corresponding values of I
2
t
1000
I
TSM
(A)
Non repetitive
T
j
initial=25 °C
SMBF-3L
Repetitive
T
A
=25 °C
I
TSM
(A), I t (A s)
T
j
initial=25 °C
2
2
t
p
=10ms
One cycle
100
I
TSM
10
I²t
Sinusoidal pulse with
width tp < 10 ms
Number of cycles
1
0.01
t
p
(ms)
0.10
1.00
10.00
Figure 13. On-state characteristics (maximum
values)
I
TM
(A)
Figure 14. Thermal resistance junction to
ambient versus copper surface under anode
(SMBflat-3L)
170
160
150
140
130
120
110
100
90
80
70
60
50
R
th(j-a)
(°C/W)
Epoxy printed circuit board FR4
copper thickness = 35 µm
100.0
10.0
T
J
=125°C
1.0
T
J
=25°C
V
TM
(V)
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
T
j
max :
V
to
=0.9 V
R
d
=200 mΩ
S(cm²)
0
1
2
3
4
5
4.5
5.0
DocID022271 Rev 4
5/10
10
京公网安备 11010802033920号
EEWORLD
