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IPP50N10S3L-16

Description
MOSFET N-Ch 100V 50A TO220-3 OptiMOS-T
CategoryDiscrete semiconductor    The transistor   
File Size184KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IPP50N10S3L-16 Overview

MOSFET N-Ch 100V 50A TO220-3 OptiMOS-T

IPP50N10S3L-16 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-220AB
package instructionGREEN, PLASTIC, TO-220, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)264 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)50 A
Maximum drain current (ID)50 A
Maximum drain-source on-resistance0.0209 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)100 W
Maximum pulsed drain current (IDM)200 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
IPB50N10S3L-16
IPI50N10S3L-16, IPP50N10S3L-16
OptiMOS
®
-T
Power-Transistor
Product Summary
V
DS
R
DS(on),max
(SMD version)
I
D
100
15.4
50
PG-TO262-3-1
V
mΩ
A
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
PG-TO263-3-2
PG-TO220-3-1
Type
IPB50N10S3L-16
IPI50N10S3L-16
IPP50N10S3L-16
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N10L16
3N10L16
3N10L16
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol
I
D
Conditions
T
C
=25 °C,
V
GS
=10 V
T
C
=100 °C,
V
GS
=10 V
1)
Pulsed drain current
1)
Avalanche energy, single pulse
1)
Avalanche current, single pulse
Gate source voltage
2)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
T
C
=25 °C
I
D
=25A
Value
50
37
200
330
50
±20
100
-55 ... +175
55/175/56
mJ
A
V
W
°C
Unit
A
Rev. 1.1
page 1
2008-04-09

IPP50N10S3L-16 Related Products

IPP50N10S3L-16 IPB50N10S3L-16
Description MOSFET N-Ch 100V 50A TO220-3 OptiMOS-T MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Parts packaging code TO-220AB D2PAK
package instruction GREEN, PLASTIC, TO-220, 3 PIN SMALL OUTLINE, R-PSSO-G2
Contacts 3 4
Reach Compliance Code compliant not_compliant
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 264 mJ 264 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V
Maximum drain current (Abs) (ID) 50 A 50 A
Maximum drain current (ID) 50 A 50 A
Maximum drain-source on-resistance 0.0209 Ω 0.0206 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-263AB
JESD-30 code R-PSFM-T3 R-PSSO-G2
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 100 W 100 W
Maximum pulsed drain current (IDM) 200 A 200 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal surface Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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