SILICON SWITCHING NPN TRANSISTOR
2N2222ACSM
High Speed Saturated Switching
Hermetic Ceramic Surface Mount Package
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Total Power Dissipation at
Junction Temperature Range
Storage Temperature Range
75V
40V
6V
0.8A
500mW
2.86mW/°C
-65 to +200°C
-65 to +200°C
TA = 25°C
Derate Above 25°C
THERMAL PROPERTIES
Symbols
RθJA
Parameters
Thermal Resistance, Junction To Ambient
Max.
350
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab
assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that
datasheets are current before placing orders.
Semelab Limited
Telephone: +44 (0) 1455 556565
Fax: +44 (0) 1455 552612
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number: 3391
Issue: 5
Page: 1 of 3
SILICON SWITCHING NPN TRANSISTOR
2N2222ACSM
ELECTRICAL CHARACTERISTICS
(T
A = 25°C unless otherwise stated)
Symbols
V(BR)CEO
(1)
Parameters
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Emitter
Cut-Off Current
Collector-Base
Cut-Off Current
Emitter Cut-Off Current
Test Conditions
IC = 10mA
IC = 10µA
IE = 10µA
VEB = 3V
IE = 0
VCE = 60V
VCB = 60V
TA = 150°C
IC = 0
IC = 150mA
IC = 500mA
IC = 150mA
IC = 500mA
IC = 0.1mA
IC = 1.0mA
IC = 10mA
VEB = 3V
IB = 15mA
IB = 50mA
IB = 15mA
IB = 50mA
VCE = 10V
VCE = 10V
VCE = 10V
TA = -55°C
IC = 150mA
IC = 150mA
IC = 500mA
VCE = 10V
VCE = 1.0V
VCE = 10V
Min.
40
75
6
Typ.
Max.
Units
V(BR)CBO
V(BR)EBO
ICEX
ICBO
IEBO
VCE(Sat)
(1)
V
10
nA
10
10
10
0.3
1.0
V
0.6
1.2
2.0
35
50
75
35
100
50
40
300
-
µA
nA
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
VBE(Sat)
(1)
hFE
(1)
DC Current Gain
DYNAMIC CHARACTERISTICS
Cobo
Cibo
ft
hfe
td
tr
ts
tf
Output Capacitance
Input Capacitance
Transition Frequency
Small Signal Current Gain
Delay Time
Rise Time
Storage Time
Fall Time
Note
(1)
Pulse Width ≤ 380µs
,
δ ≤ 2%
VCB = 10V
VEB = 0.5V
IC = 20mA
IC = 1.0mA
IC = 10mA
VCC = 30V
IC = 150mA
VCC = 30V
IC = 150mA
IE = 0
IC = 0
VCE = 20V
VCE = 10V
VCE = 10V
VBE = 0.5V
IB1 = 15mA
VBE = 0.5V
f = 1.0MHz
f = 1.0MHz
f = 100MHz
f = 1.0kHz
f = 1.0kHz
300
50
75
8
pF
30
MHz
300
-
375
10
25
ns
225
60
IB1 = IB2 = 15mA
Semelab Limited
Telephone: +44 (0) 1455 556565
Fax: +44 (0) 1455 552612
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number: 3391
Issue: 5
Page: 2 of 3
SILICON SWITCHING NPN TRANSISTOR
2N2222ACSM
MECHANICAL DATA
Dimensions in mm (inches)
0.51 ± 0.10
(0.02 ± 0.004)
R0.31
(0.012)
1.02 ± 0.10
(0.04 ± 0.004)
2.54 ± 0.13
(0.10 ± 0.005)
3
2
1
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
0.76 ± 0.15
(0.03 ± 0.006)
0.31
(0.012) rad.
1.40
(0.055)
max.
LCC1
Underside View
Pad 1 - Base
Pad 2 - Emitter
Pad 3 - Collector
Semelab Limited
Telephone: +44 (0) 1455 556565
Fax: +44 (0) 1455 552612
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number: 3391
Issue: 5
Page: 3 of 3
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