Advanced Schottky Barrier Diodes
ASD501V-N
Surface mount small signal type
Formosa MS
0.106 (2.7)
0.090 (2.3)
0.012(0.3) Typ.
Features
Extermely low VF
Extermely thin package
R0.5 (0.02) Typ.
Low stored charge
Majority carrier conduction
0.053 (1.35)
0.045 (1.15)
0.035 (0.9)
0.028 (0.7)
Mechanical data
Case : Molded plastic, JEDEC SOD-323
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.000159 ounce, 0.0045 gram
SOD-323
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Repetitive peak reverse voltage
Continuous reverse voltage
Mean rectifying current
Forward surge current
Capacitance between terminals
Storage temperature
Operating temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
f=1MHz and applied 10VDC reverse voltage
CONDITIONS
Symbol
V
RM
V
R
I
O
I
FSM
C
T
T
J
T
STG
-40
-40
1000
20
+125
+125
MIN.
TYP.
MAX.
45
40
100
UNIT
V
V
mA
mA
pF
o
o
C
C
ELECTRICAL CHARACTERISTICS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Forward voltage
Reverse current
IF = 100 mA DC
V
R
= 10 V DC
CONDITIONS
Symbol
V
F
I
R
MIN.
TYP.
MAX.
0.55
30
UNIT
V
uA
RATING AND CHARACTERISTIC CURVES (ASD501V-N)
1000
REVERSE CURRENT : (A)
10m
125 C
O
FORWARD CURRENT : (mA)
1m
75 C
O
100
100
10
25 C
O
5C
12
75
O
C
O
C
10
O
25
O
1
25
C
1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.1
0
10
20
40
FORWARD VOLTAGE : (V)
REVERSE VOLTAGE : (V)
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
100
Io CURRENT (%)
80
60
40
20
0
0
CAPACITANCE BETWEEN TERMINALS : (pF)
10
25
50
75
100
1
0
5
101
52
02
53
03
5
AMBIENT TEMPERATURE : Ta
REVERSE VOLTAGE : V
Fig. 4 Derating curve
(mounting on glass epoxy PCBs)
Fig. 3 Capacitance between
terminals characteristics
Embedded System
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