Advanced Schottky Barrier Diodes
ASD751V-N2
Surface mount small signal type
Formosa MS
0.106 (2.7)
0.090 (2.3)
0.012(0.3) Typ.
Features
Extermely low VF
Extermely thin package
Low stored charge
Majority carrier conduction
0.035 (0.9)
0.028 (0.7)
R0.5 (0.02) Typ.
0.053 (1.35)
0.045 (1.15)
0.106 (2.7)
0.090 (2.3)
0.02(0.5) Typ.
R0.02 (0.5) Typ.
0.035 (0.9)
0.028 (0.7)
Mechanical data
Case : Molded plastic, JEDEC SOD-323
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.000159 ounce, 0.0045 gram
SOD-323
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Repetitive peak reverse voltage
Continuous reverse voltage
Mean rectifying current
Forward surge current
Capacitance between terminals
Storage temperature
Operating temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
f=1MHz and applied 10VDC reverse voltage
CONDITIONS
Symbol
V
RM
V
R
I
O
I
FSM
C
T
T
J
T
STG
-40
-40
200
20
+125
+125
MIN.
TYP.
MAX.
40
30
30
UNIT
V
V
mA
mA
pF
o
o
C
C
ELECTRICAL CHARACTERISTICS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Forward voltage
Reverse current
IF = 1.0 mA DC
V
R
= 30 V DC
CONDITIONS
Symbol
V
F
I
R
MIN.
TYP.
0.26
0.17
MAX.
0.37
0.5
UNIT
V
uA
RATING AND CHARACTERISTIC CURVES (ASD751V-N2)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
1000m
INSTANTANEOUS FORWARD CURRENT,(A)
FIG.2 - TYPICAL REVERSE
CHARACTERISTICS
100
O
Typ.
pulse measurement
100m
10m
1m
100u
10u
1u
Ta
=
REVERSE CURRENT , (uA)
Ta = 125 C
10
Ta = 75 C
O
5C
O
12
Ta = 75 C
O
1
Ta = 25 C
100n
Ta = -25 C
Typ.
pulse measurement
5
10
15
20
25
30
35
REVERSE VOLTAGE , (V)
O
O
Ta = 25 C
Ta = -25 C
O
O
10n
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1n
0
FORWARD VOLT
AGE,(V)
FIG.3-TYPICAL TERMINALS CAPACITANCE
100
CAPACITANCE BETWEEN TERMINALS ,(pF)
50
Ta = 25 C
f = 1MHz
O
20
10
5
2
1
0
2
4
6
8
10
12
14
REVERSE VOLTAGE , (V)
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