ZXT13P20DE6
20V PNP LOW SATURATION SWITCHING TRANSISTOR IN SOT26
Features
BV
CEO
> -20V
I
C
= -3.5A Continuous Collector Current
I
CM
= -10A Peak Pulse Current
R
CE(sat)
= 75mΩ for a Low Equivalent On-Resistance
Low Saturation Voltage of <-130mV max @ -1A
h
FE
Characterized up to -10A for High Current Gain Hold-Up
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads;
Solderable per MIL-STD-202, Method 208
Weight: 0.015 grams (Approximate)
ADVANCE INFORMATION
Applications
DC-DC Converters
Power Management Functions
Power Switches
Motor Control
SOT26
C
B
E
Top View
Device Symbol
Pin-Out Top
Ordering Information
(Notes 4)
Product
ZXT13P20DE6TA
Notes:
Marking
P20D
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT26
P20D
P20D = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
Date Code Key
Year
2015
Code
C
Month
Code
Jan
1
2016
D
Feb
2
2017
E
Mar
3
2018
F
Apr
4
YM
2019
G
May
5
2020
H
Jun
6
2021
I
Jul
7
Aug
8
2022
J
Sep
9
2023
K
Oct
O
2024
L
Nov
N
2025
M
Dec
D
October 2015
ZXT13P20DE6
Document Number: DS33638 Rev. 4 - 2
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© Diodes Incorporated
ZXT13P20DE6
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Continuous Collector Current
Peak Pulse Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
B
I
C
I
CM
Value
-25
-20
-7.5
-500
-3.5
-10
Unit
V
V
V
mA
A
A
ADVANCE INFORMATION
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 5)
P
D
(Note 6)
(Note 5)
(Note 6)
(Note 7)
R
θJA
R
θJL
T
J
, T
STG
Symbol
Value
1.1
8.8
1.7
13.6
113
73
18.61
-55 to +150
Unit
W
mW/°C
°C/W
°C
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with collector leads on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is measured at t
5 seconds.
7. Thermal resistance from junction to solder-point (at the end of the collector leads).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXT13P20DE6
Document Number: DS33638 Rev. 4 - 2
2 of 7
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October 2015
© Diodes Incorporated
ZXT13P20DE6
Thermal Characteristics and Derating Information
10
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100 120 140 160
ADVANCE INFORMATION
10
1
1
1s
DC
100ms
1s
10ms
100ms
1ms
10ms
1ms
100µs
DC
100m
100m
100µs
10m
100m
100m
Single Pulse Tamb=25°C
Single Pulse T
amb
=25°C
V
CE
Collector-Emitter Voltage (V)
V
CE
Collector-Emitter Voltage (V)
1
1
10
10
Max Power Dissipation (W)
I
C
Collector Current (A)
I
C
Collector Current (A)
Safe
Operating Area
Safe
Operating Area
Temperature (°C)
Derating Curve
Thermal Resistance (°C/W)
120
100
80
60
40
20
D=0.1
D=0.5
D=0.2
Single Pulse
D=0.05
0
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
ZXT13P20DE6
Document Number: DS33638 Rev. 4 - 2
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October 2015
© Diodes Incorporated
ZXT13P20DE6
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
CES
Min
-25
-20
-7.5
300
300
150
10
Typ
-55
-50
-8.5
500
450
250
-10
-100
-165
90
62
95
395
Max
-100
-100
-100
900
-15
-130
-250
-1.1
-0.9
Unit
V
V
V
nA
nA
nA
mV
V
V
MHz
pF
ns
ns
Test Condition
I
C
= -100μA
I
C
= -10mA
I
E
= -100μA
V
CB
= -20V
V
EB
= -6V
V
CES
= -20V
I
C
= -10mA, V
CE
= -2V
I
C
= -1A, V
CE
= -2V
I
C
= -3.5A, V
CE
= -2V
I
C
= -10A, V
CE
= -2V
I
C
= -100mA, I
B
= -10mA
I
C
= -1A, I
B
= -10mA
I
C
= -3.5A, I
B
= -350mA
I
C
= -3.5A, I
B
= -350mA
I
C
= -3.5A, V
CE
= -2V
V
CE
= -10V, I
C
= -50mA, f = 50MHz
V
CB
= -10V, f = 1MHz
V
CC
= -10V, I
C
= -2A
I
B1
= I
B2
= -40mA
ADVANCE INFORMATION
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector-Base Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
ON CHARACTERISTICS
(Note 9)
DC Current Gain
h
FE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Turn-Off Time
Note:
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
C
obo
t
(on)
t
(off)
9. Measured under pulsed conditions; pulse width
300μs, duty cycle
2%.
ZXT13P20DE6
Document Number: DS33638 Rev. 4 - 2
4 of 7
www.diodes.com
October 2015
© Diodes Incorporated
ZXT13P20DE6
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Tamb=25°C
0.25
I
C
/I
B
=50
ADVANCE INFORMATION
100m
0.20
V
CE(SAT)
(V)
V
CE(SAT)
(V)
I
C
/I
B
=100
0.15
100°C
10m
I
C
/I
B
=50
I
C
/I
B
=10
0.10
25°C
0.05
-55°C
1m
1m
10m
100m
1
10
I
C
Collector Current (A)
0.00
1m
10m
100m
1
10
V
CE(SAT)
v I
C
1.6
1.4
V
CE
=2V
100°C
I
C
Collector Current (A)
V
CE(SAT)
v I
C
1.0
I
C
/I
B
=50
Normalised Gain
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1m
10m
100m
1
10
-55°C
25°C
V
BE(SAT)
(V)
0.8
-55°C
25°C
0.6
100°C
0.4
1m
10m
100m
1
10
I
C
Collector Current (A)
I
C
Collector Current (A)
h
FE
v I
C
V
BE(SAT)
v I
C
1.0
V
CE
=2V
V
BE(ON)
(V)
0.8
-55°C
0.6
25°C
100°C
0.4
1m
10m
100m
1
10
I
C
Collector Current (A)
V
BE(ON)
v I
C
ZXT13P20DE6
Document Number: DS33638 Rev. 4 - 2
5 of 7
www.diodes.com
October 2015
© Diodes Incorporated
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