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PTVA120501EAV1R250XTMA1

Description
RF MOSFET Transistors RFP-LDH1V
CategoryDiscrete semiconductor    The transistor   
File Size543KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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PTVA120501EAV1R250XTMA1 Overview

RF MOSFET Transistors RFP-LDH1V

PTVA120501EAV1R250XTMA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompliant
ECCN codeEAR99
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
PTVA120501EA
Thermally-Enhanced High Power RF LDMOS FET
50 W, 50 V, 1200 – 1400 MHz
Description
The PTVA120501EA LDMOS FET is designed for use in power ampli-
fier applications in the 1200 to 1400 MHz frequency band. Features
include high gain and thermally-enhanced package with bolt-down
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTVA120501EA
Package H-36265-2
Features
V
DD
= 50 V, I
DQ
= 50 mA, T
CASE
= 25°C,
300 µs pulse width, 10% duty cycle
60
55
Efficiency
Power Sweep, Pulsed RF
70
Broadband input matching
High gain and efficiency
Typical Pulsed CW performance, 1200 – 1400MHz,
50 V, 300 µs pulse width, 10 % duty cycle, class AB
- Output power at P
1dB
=
54 W
- Efficiency = 55%
- Gain = 16 dB
Integrated ESD protection
Low thermal resistance
Pb-free and RoHS compliant
Capable of withstanding a
10:1 load
mismatch
(all phase angles) at 50 W peak under RF pulse,
300 μS, 10% duty cycle.
Drain Efficiency (%)
60
50
Output Power
P
OUT
(dBm)
50
45
40
35
30
40
30
20
10
1200 MHz
1300 MHz
1400 MHz
18
22
26
30
34
a120501ea_g1-1
38
P
IN
(dBm)
RF Characteristics
Pulsed RF Performance
(tested in Infineon test fixture)
V
DD
= 50 V, I
DQ
= 50 mA, P
OUT
= 50
W, ƒ
1
= 1200 MHz, ƒ
2
= 1300 MHz,
ƒ
3
= 1400 MHz, 300 μs pulse width, 10 % duty
cycle
Characteristic
Gain
Drain Efficiency
Return Loss
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
G
ps
Min
16.5
46
Typ
17
50
–10
Max
–7
Unit
dB
%
dB
h
D
IRL
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 02.2, 2017-02-07

PTVA120501EAV1R250XTMA1 Related Products

PTVA120501EAV1R250XTMA1 PTVA120501EAV1XWSA1
Description RF MOSFET Transistors RFP-LDH1V RF MOSFET Transistors RFP-LDH1V
Is it Rohs certified? conform to conform to
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1

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